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NSR05F40NXT5G PDF даташит

Спецификация NSR05F40NXT5G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Schottky Barrier Diode».

Детали детали

Номер произв NSR05F40NXT5G
Описание Schottky Barrier Diode
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NSR05F40NXT5G Даташит, Описание, Даташиты
NSR05F40NXT5G
Schottky Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current and are offered in a Chip Scale
Package (CSP) to reduce board space. The low thermal resistance
enables designers to meet the challenging task of achieving higher
efficiency and meeting reduced space requirements.
Features
Low Forward Voltage Drop − 420 mV @ 500 mA
Low Reverse Current − 15 mA @ 10 V VR
500 mA of Continuous Forward Current
ESD Rating − Human Body Model: Class 3B
ESD Rating − Machine Model: Class C
High Switching Speed
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping and Protection
Markets
Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs & PDAs
GPS
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
VR 40 V
Forward Current (DC)
IF 500 mA
Forward Surge Current
IFSM
(60 Hz @ 1 cycle)
10
A
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
IFRM
4.0
A
ESD Rating:
Human Body Model
Machine Model
ESD
>8
> 400
kV
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
http://onsemi.com
40 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
2
1
DSN2
(0402)
CASE 152AC
MARKING
DIAGRAM
PIN 1
05F40
YYY
05F40 = Specific Device Code
YYY = Year Code
ORDERING INFORMATION
Device
Package
Shipping
NSR05F40NXT5G DSN2 5000 / Tape & Reel
(Pb−Free)
NSVR05F40NXT5G DSN2 5000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 6
1
Publication Order Number:
NSR05F40/D









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NSR05F40NXT5G Даташит, Описание, Даташиты
NSR05F40NXT5G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
RqJA
PD
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
RqJA
PD
Storage Temperature Range
Tstg −40 to +125
Junction Operating Temperature Range
TJ −40 to +150
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
Max
240
521
94
1.3
Unit
°C/W
mW
°C/W
W
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Leakage
(VR = 10 V)
(VR = 40 V)
IR mA
15
75
Forward Voltage
(IF = 100 mA)
(IF = 500 mA)
VF V
0.340
0.360
0.420
0.460
Total Capacitance
(VR = 1 V, f = 1 MHz)
(VR = 10 V, f = 1 MHz)
CT pF
70 80
27 35
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
http://onsemi.com
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NSR05F40NXT5G Даташит, Описание, Даташиты
NSR05F40NXT5G
TYPICAL CHARACTERISTICS
1
0.1
0.01
0.001
0
150°C
125°C 75°C 25°C −25°C
100000
10000
1000
100
10
1
0.1
150°C
125°C
75°C
25°C
−25°C
0.01
0.001
0.10 0.20 0.30 0.40 0.50 0.60
0 5 10 15 20 25 30 35 40
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 1. Forward Voltage
Figure 2. Leakage Current
120
TA = 25°C
100
80
60
40
20
0
0 5 10 15 20 25 30 35 40
VR, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
http://onsemi.com
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Номер в каталогеОписаниеПроизводители
NSR05F40NXT5GSchottky Barrier DiodeON Semiconductor
ON Semiconductor

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