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NSR05F30QNXT5G PDF даташит

Спецификация NSR05F30QNXT5G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Schottky Diode Optimized».

Детали детали

Номер произв NSR05F30QNXT5G
Описание Schottky Diode Optimized
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NSR05F30QNXT5G Даташит, Описание, Даташиты
NSR05F30QNXT5G
Schottky Diode Optimized
for High Frequency
Switching Power Supplies
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current and are offered in a Chip Scale
Package (CSP) to reduce board space. The low thermal resistance
enables designers to meet the challenging task of achieving higher
efficiency and meeting reduced space requirements.
Features
Low Forward Voltage Drop 400 mV @ 500 mA
Low Reverse Current 15 mA @ 10 V VR
500 mA of Continuous Forward Current
ESD Rating Human Body Model: Class 3B
ESD Rating Machine Model: Class C
High Switching Speed
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dcdc Converters
Reverse Voltage and Current Protection
Clamping & Protection
Markets
Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs & PDAs
GPS
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
VR 30 V
Forward Current (DC)
IF 500 mA
Forward Surge Current
(60 Hz @ 1 cycle)
IFSM
10
A
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
IFRM
4.0
A
ESD Rating:
Human Body Model
Machine Model
ESD
>8
> 400
kV
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
30 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
2
1
DSN2
(0402)
CASE 152AC
MARKING
DIAGRAM
PIN 1
05F30
YYY
05F30 = Specific Device Code
YYY = Year Code
ORDERING INFORMATION
Device
Package Shipping
NSR05F30QNXT5G DSN2 5000 / Tape &
(PbFree)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
February, 2013 Rev. P0
1
Publication Order Number:
NSR05F30Q/D









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NSR05F30QNXT5G Даташит, Описание, Даташиты
NSR05F30QNXT5G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
JunctiontoAmbient (Note 1)
Total Power Dissipation @ TA = 25°C
RPqDJA
240
521
Thermal Resistance
JunctiontoAmbient (Note 2)
Total Power Dissipation @ TA = 25°C
RPqDJA
94
1.3
Storage Temperature Range
Tstg 40 to +125
Junction Temperature
TJ +150
1. Mounted onto a 4 in square FR4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
Unit
°C/W
mW
°C/W
W
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Leakage
(VR = 10 V)
(VR = 30 V)
IR
Forward Voltage
(IF = 100 mA)
(IF = 500 mA)
VF
Min
Typ
0.320
0.400
Max
15
75
0.360
0.430
Unit
mA
V
http://onsemi.com
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NSR05F30QNXT5G Даташит, Описание, Даташиты
1
0.1
0.01
0.001
0
NSR05F30QNXT5G
TYPICAL CHARACTERISTICS
150°C
125°C 75°C 25°C 25°C
0.10 0.20 0.30 0.40
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
100000
10000
1000
100
10
1
0.1
0.01
0.001
0.50 0
150°C
125°C
75°C
25°C
25°C
5 10 15 20 25
VR, REVERSE VOLTAGE (V)
Figure 2. Leakage Current
30
160
140
120
100
80
60
40
20
0
0
TA = 25°C
5 10 15 20 25
VR, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
30
http://onsemi.com
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Номер в каталогеОписаниеПроизводители
NSR05F30QNXT5GSchottky Diode OptimizedON Semiconductor
ON Semiconductor

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