NSR05F20NXT5G PDF даташит
Спецификация NSR05F20NXT5G изготовлена «ON Semiconductor» и имеет функцию, называемую «Schottky Barrier Diode». |
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Детали детали
Номер произв | NSR05F20NXT5G |
Описание | Schottky Barrier Diode |
Производители | ON Semiconductor |
логотип |
4 Pages
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NSR05F20NXT5G
Schottky Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current and are offered in a Chip Scale
Package (CSP) to reduce board space. The low thermal resistance
enables designers to meet the challenging task of achieving higher
efficiency and meeting reduced space requirements.
Features
• Low Forward Voltage Drop − 390 mV @ 500 mA
• Low Reverse Current − 15 mA @ 10 V VR
• 500 mA of Continuous Forward Current
• ESD Rating − Human Body Model: Class 3B
ESD Rating − Machine Model: Class C
• High Switching Speed
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
Markets
• Mobile Handsets
• MP3 Players
• Digital Camera and Camcorders
• Notebook PCs & PDAs
• GPS
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
Forward Current (DC)
Forward Surge Current (60 Hz @ 1 cycle)
ESD Rating:
Human Body Model
Machine Model
VR
IF
IFSM
ESD
20
500
10
>8
> 400
V
mA
A
kV
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
20 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
2
1
DSN2
(0402)
CASE 152AC
MARKING
DIAGRAM
PIN 1
05F20
YYY
05F20 = Specific Device Code
YYY = Year Code
ORDERING INFORMATION
Device
Package
Shipping†
NSR05F20NXT5G DSN2 5000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
July, 2010 − Rev. 1
1
Publication Order Number:
NSR05F20/D
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NSR05F20NXT5G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
RPqDJA
240
521
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
RPqDJA
94
1.3
Storage Temperature Range
Tstg −40 to +125
Junction Temperature
TJ +150
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
Unit
°C/W
mW
°C/W
W
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Leakage
(VR = 10 V)
(VR = 20 V)
IR
Forward Voltage
(IF = 100 mA)
(IF = 500 mA)
VF
Min
Typ
0.330
0.390
Max
15
75
0.345
0.430
Unit
mA
V
http://onsemi.com
2
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1
0.1
0.01
0.001
0
NSR05F20NXT5G
TYPICAL CHARACTERISTICS
150°C
125°C 75°C 25°C −25°C
0.10 0.20 0.30 0.40
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
100000
10000
1000
100
10
1
0.1
0.01
0.001
0.50 0
150°C
125°C
75°C
25°C
−25°C
4 8 12 16
VR, REVERSE VOLTAGE (V)
Figure 2. Leakage Current
20
180
160
140
120
100
80
60
40
20
0
0
TA = 25°C
4 8 12 16
VR, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
20
http://onsemi.com
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Номер в каталоге | Описание | Производители |
NSR05F20NXT5G | Schottky Barrier Diode | ON Semiconductor |
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