DataSheet26.com

WBW3320 PDF даташит

Спецификация WBW3320 изготовлена ​​​​«Winsemi» и имеет функцию, называемую «NPN Power Transistor».

Детали детали

Номер произв WBW3320
Описание NPN Power Transistor
Производители Winsemi
логотип Winsemi логотип 

6 Pages
scroll

No Preview Available !

WBW3320 Даташит, Описание, Даташиты
WBW3320
High Voltage Fast-Switching NPN Power Transistor
Features
Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
TO3P
WBW3320
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
VCES
VCEO
VEBO
IC
ICP
IB
IBM
PC
TJ
TST G
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc = 25
Operation Junction Temperature
Storage Temperature
Test Conditions
VBE = 0
IB = 0
IC = 0
tP = 5ms
TO247
WBW3320W
Value
Units
500
400
9
15
30
7
14
120
150
-55 ~ 150
V
V
V
A
A
A
A
W
Thermal Characteristics
Sym bol
Parameter
RθJc Thermal Resistance Junction to Case
RθJA Thermal Resistance Junction to Ambient
Value
1.05
62.5
Units
/W
/W
Rev.A Jul.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right r eserved.
T0 2-1









No Preview Available !

WBW3320 Даташит, Описание, Даташиты
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
VCEO(sus) Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0
V CE(sat)
Collector-Emitter Saturation Voltage
Ic=10A,Ib= 2A
Ic=12A,Ib= 2.4A
Tc=100
VBE(sat) Base-Emitter Saturation Voltage
IEBO Emitter-Base Cutoff Current
IcBO Collector-Base Cutoff Current
ICE O Collector-Emitter Cutoff Current
hFE DC Current Gain
ts Storage Time
tf Fall Time
fT Current Gain Band with Prouct
Ic=10A,Ib= 2A
Ic=12A,Ib= 2.4A
Tc=100
Veb=9V,Ic=0V
Vcb=500V,Ie=0V
Vc e=400V,I b=0V
Vce=5V, Ic=6A
Vce=5V, Ic=10A
VCC=24V , Ic=6A
IB1=-IB2=1.2A
(UI9600)
Vce=10V, Ic=0.5A
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
WBW3320
V alue
Units
Min Typ Max
400 - - V
- - 1.0 V
- - 2.0 V
- - 1.5 V
- - 1.8 V
- - 10 µA
- - 100 µA
50 µA
10 -
8-
45
-
- 3
0.7
4 MHz
Steady, keep you advance
2 /6









No Preview Available !

WBW3320 Даташит, Описание, Даташиты
WBW3320
Fig.1 DC Current Gain
Fig.2 Base -Emitter S aturation Voltage
Fig.3 Collector-Emitter Saturation Voltage
Fig.6 Power Derating
Fig.5 Static Characteristics
Steady, keep you advance
3 /6










Скачать PDF:

[ WBW3320.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
WBW3320NPN Power TransistorWinsemi
Winsemi

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск