DataSheet26.com

WCD10C60 PDF даташит

Спецификация WCD10C60 изготовлена ​​​​«Winsemi» и имеет функцию, называемую «Silicon Controlled Rectifiers».

Детали детали

Номер произв WCD10C60
Описание Silicon Controlled Rectifiers
Производители Winsemi
логотип Winsemi логотип 

5 Pages
scroll

No Preview Available !

WCD10C60 Даташит, Описание, Даташиты
Features
Repetitive Peak Off-State Voltage:600V
R.M.S On-State Current (IT(RMS)=10A)
Low On-State Voltage(1.4V(Typ.)@ITM)
Non-isolation Type
WCD10C60
Silicon Controlled Rectifiers
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor control
circuit in power tool, inrush current limit circuit and heating control
system
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
Parameter
Condition
VDRM
IT(AV)
Repetitive Peak Off-State Voltage
Average On-State Current
Half Sine Wave:TC =111 °C
IT(RMS)
R.M.S On-State Current
180°conduction Angle
ITSM Surge on-state Current
1/2 Cycle,60Hz,Sine Wave
Non-Repetitive
I2t I2t for Fusing
t=8.3ms
di/dt Critical rate of rise of on-state current
PGM
PG(AV)
Forward Peak Gate Power Dissipation
Forward Average Gate Power
Dissipation
IFGM Forward Peak Gate Current
VRGM
TJ
Reverse Peak Gate Voltage
Operating Junction Temperature
TSTG
Storage Temperature
Value
600
6.4
10
110
60
50
5
0.5
2
5.0
-40~125
-40~150
Units
V
A
A
A
A2s
A/
W
W
A
V
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJc Thermal Resistance Junction to Case
RθJA Thermal Resistance Junction to Ambient
Value
Units
Min Typ Max
- - 1.3 /W
- - 60 /W
Rev.A Oct.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.









No Preview Available !

WCD10C60 Даташит, Описание, Даташиты
WCD10C60
Electrical Characteristics (TC=25,unless otherwise noted)
Symbol
Parameter
Test Conditions
IDRM
Repetitive Peak Off-State
Current
VAK=VDRM
TC=25
TC=125
Value
Units
Min Typ Max
- - 10 μA
- - 200 μA
VTM Peak On-State Voltage (1)
ITM=20A, tp=380
- 1.4 1.6 V
IGT
VGT
VGD
dv/dt
IH
Gate Trigger Current (2)
Gate Trigger Voltage (2)
Non-Trigger Gate Voltage (1)
Critical Rate of Rise Off-State
Voltage
Holding Current
VAK=6V(DC),RL=10Ω
TC=25
VD=6V(DC),RL=10Ω
TC=25
VAK=12V,RL=100Ω TC=125
Linear slope up to VD=67%
VDRM, gate open
TJ=125
IT=100mA, Gate Open
TC=25
-
-
0.2
200
-
-
-
-
-
15 mA
1.5 V
V
- V/
20 mA
*Notes:
1 Pulse Width ≤1.0ms,Duty cycle≤1%
2 RGK Current is not Included in measurement.
Steady, keep you advance
2/5









No Preview Available !

WCD10C60 Даташит, Описание, Даташиты
WCD10C60
Fig.1Gate Characteristics
Fig .2 Maximum Case Temperature
Fig. 3 Typical Forward Voltage
Fig. 4 Thermal Response
Fig.5Typical Gate Trigger Voltage
vs.Junction Temperature
Fig.6Typical Gate Trigger current
vs.Junction Temperature
Steady, keep you advance
3/5










Скачать PDF:

[ WCD10C60.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
WCD10C60Silicon Controlled RectifiersWinsemi
Winsemi

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск