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WCD4C60 PDF даташит

Спецификация WCD4C60 изготовлена ​​​​«Winsemi» и имеет функцию, называемую «Silicon Controlled Rectifiers».

Детали детали

Номер произв WCD4C60
Описание Silicon Controlled Rectifiers
Производители Winsemi
логотип Winsemi логотип 

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WCD4C60 Даташит, Описание, Даташиты
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 4 A )
Low On-State Voltage (1.6V(Typ.) @ ITM)
Isolation Voltage(VISO=1500V AC)
WCD4C60
Silicon Controlled Rectifiers
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor control
circuit in power tool, inrush current limit circuit and heating control
system.
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
VDRM
IT(AV)
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current(180°
Conduction Angle)
Condition
Ti =60 °C
Tamb=25 °C
IT(RMS)
ITSM
I2t
di/dt
PGM
R.M.S On-State Current(180° Conduction
Angle)
Surge On-State Current
I2t for Fusing
Critical rate of rise of on-state current
Forward Peak Gate Power Dissipation
Ti =60 °C
Tamb=25 °C
1/2 Cycle, 60Hz, Sine
WaveNon-Repetitive
t =10ms
F=60Hz,Tj=125 °C
PG(AV) Forward Average Gate Power Dissipation Tj=125 °C
IFGM
VISO
TJ
TSTG
Forward Peak Gate Current
Isolation Breakdown voltage(R.M..S)
Operating Junction Temperature
Storage Temperature
A,C.1minute
Ratings
600
1.35
0.9
4
1.35
Units
V
A
A
33 A
4.5
50
0.5
0.2
1.2
1500
-40~125 °C
-40~150 °C
A2s
A/
W
W
A
V
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance Junction to Case(DC)
RθJA Thermal Resistance Junction to Ambient(DC)
Rev.A Oct.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
Value
15
100
Units
/W
/W









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WCD4C60 Даташит, Описание, Даташиты
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Test Conditions
IDRM Repetitive Peak Off-State Current VAK=VDRM RGK=1KΩ
WCD4C60
Value
Units
Min Typ Max
- - 10 μA
- - 1 mA
VTM Peak On-State Voltage (1)
ITM=8A, tp=380
- 1.6 1.8
V
IGT
VGT
VGD
dv/dt
Gate Trigger Current (2)
Gate Trigger Voltage (2)
VD=12V,RL=140
Non-Trigger Gate Voltage (1)
Critical Rate of Rise Off-State
Voltage
VD=12V,RL=3.3KΩ, RGK=1 KΩ
VD=67%VDRM, RGK=1 KΩ
-
-
0.1
200
-
-
-
15 mA
1.5 V
V
- V/
IH Holding Current
IT=50mA, RGK=1 KΩ
- - 20 mA
IL Latching Current
IT=1mA, RGK=1 KΩ
6-
- mA
Rd Dynamic resistance
Tj=125°C
- - 100
Note:
1. Pulse Width = 1.0 ms , Duty cycle ≤ 1%
2. RGK Current not Included in measurement
Steady, keep you advance
2/5









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WCD4C60 Даташит, Описание, Даташиты
WCD4C60
Fig . 1 Average and D.C.on-state current
versus ambient temperature (device mounted
on FR4 with recommended pad layout)
Fig. 2Maximum average power dissipation
versus average on-state current
Fig. 3 Relative variation of gate trigger current
And holding current versus junction temperature
Fig. 4Surge peak on-state current versus
Number of cycles.
Fig.5Relative variation of dV/dt immunity
Versus gate-cathode resistance(typical values)
Fig.6 Relative Variation of dV/dt immunity
Versus gate-cathode resistance(typical values)
Steady, keep you advance
3/5










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