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WCD8C60S PDF даташит

Спецификация WCD8C60S изготовлена ​​​​«Winsemi» и имеет функцию, называемую «Silicon Controlled Rectifiers».

Детали детали

Номер произв WCD8C60S
Описание Silicon Controlled Rectifiers
Производители Winsemi
логотип Winsemi логотип 

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WCD8C60S Даташит, Описание, Даташиты
WCD8C60S
Sensitive Gate
Silicon Controlled Rectifiers
Features
Sensitive gate trigger current:IGT=200µA maximum
Low On-State Voltage :VTM=1.2(typ.) @ ITM)
Low reverse and forward blocking current:
IDRM/IRRM=1mA@TC=125
Low holding current :IH=5mA maximum
General Description
Sensitive gate triggering SCR is suitable for the application where gate
current limited such as microcontrollers, logic integrated circuits,small
motor control, gate driver for large SCR,sensing and detecting
circuits.general purpose switching and phase control applications
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
VDRM/VRRM
IT(AV)
IT(RMS)
ITSM
I2t
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current(180° Conduction Angle)
R.M.S On-State Current(180° Conduction Angle)
Non Repetitive Surge Peak on-state Current
I2t Valuefor Fusing
(Note(1)
TI =110 °C
TI =110 °C
tp=8.3ms
tp=10ms
tp=10ms
Value
600
5
8
73
70
24.5
Units
V
A
A
A
A2s
Critical rate of rise of on-state current
di/dt
ITM=2A;IG=10mA; dIG/dt=100A/µs
TJ=125 °C
50 A/
PG(AV)
Average Gate Power Dissipation
TJ=125 °C
1W
IFGM Peak Gate Current
TJ=125 °C
4A
VRGM
Reverse Peak Gate Voltage
TJ=125 °C
5V
TJ Junction Temperature
-40~125
°C
TSTG
Storage Temperature
-40~150
°C
Note1:Although not recommended,off-state Voltages up to 800V may be applied without damage,but the thyristor may
switch to the on-stage.The rate of rise of current should not exceed15A/µs.
Thermal Characteristics
Symbol
Parameter
RθJc Thermal Resistance Junction to Case
RθJA Thermal Resistance Junction to Ambient
Value
Units
Min Typ Max
- - 20 /W
- - 70 /W
Rev.A Oct.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.









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WCD8C60S Даташит, Описание, Даташиты
WCD8C60S
Electrical Characteristics (TJ=25,RGK=1KΩ unless otherwise specified)
Symbol
Characteristics
Min
Value
Units
Typ Max
Off-state leakage current
IDRM/IRRM
(VAK=VDRM/VRRM)
TC=25
TC=125
--
5 μA
1 mA
VTM
IGT
VGT
VGD
dv/dt
IH
Forward "On"voltage (ITM=16A tp=380µs)
Gate Trigger Current(continuous dc)
(VAK=12Vdc,RL=140Ω)
Gate Trigger Voltage (continuous dc)
(VAK=12Vdc,RL=140Ω)
Gate threshold Voltage
(VD=12VDRM RL=3.3KΩ RGK=220Ω)
Critical Rate of Rise Off-State Voltage
(VD=0.67VDRM; RGK=220Ω)
Holding Current(VD=12V;IGT=0.5mA)
(Note2.1) -
1.2 1.6
V
(Note2.2)
-
- 200 μA
- - 0.8 V
(Note2.2)
0.1
(Note2.1)
TJ=125
5
-
-
-V
- V/
-2
5 mA
IL Latching Current(VD=12V;IGT=0.5mA)
-2
6 mA
Rd Dynamic resistance
TJ=125
- - 46 mΩ
*Notes:
2.1 Pulse Width ≤1.0ms,Duty cycle≤1%
2.2 RGK Current is not Included in measurement.
Steady, keep you advance
2/5









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WCD8C60S Даташит, Описание, Даташиты
WCD8C60S
0
Fig.1Maximum average power dissipation
versus average on-state current
Fig .2 Average and D.C.on-state current
versus ambient temperature (device mounted
on FR4 with recommended pad layont
Fig. 3Surge peak on-state current versus
Number of cycles.
Fig. 4On-state Characteristics (maximum values)
Fig.5Non-repetitive surge peak on-state current
for a sinusoidal pulse with width Tp<10ms and
corresponding value of l2t
Fig.6Relative variation of gate trigger current
and holding versus junction temperature
Steady, keep you advance
3/5










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