WTF16A60 PDF даташит
Спецификация WTF16A60 изготовлена «Winsemi» и имеет функцию, называемую «Bi-Directional Triode Thyristor». |
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Детали детали
Номер произв | WTF16A60 |
Описание | Bi-Directional Triode Thyristor |
Производители | Winsemi |
логотип |
6 Pages
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Features
� Repetitive Peak off -State Voltage:600V
� R.M.S On-State Current(IT(RMS)=16A)
� Isolation voltage(VISO=1500V AC)
� High Commutation dv/dt
� Halogen free(WTF16A60-HF)
WTF16A60
Bi-Directional Triode Thyristor
General Description
This device is fully isolated package suitable for AC switching
application,phase control application such as fan speed and
temperature modulation control, lighting control and static
switching relay.This device is approved to comply with applicable
requirements by Underwriters Laboratories Inc.
By using an internal ceramic pad, the TO220F series provides
voltage insulated tab (rated at 2500V RMS) complying with UL
standards (file ref.:E347423)
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
symbol
Parameter
Ratings Units
VDRM
IT(RMS)
Peak Repetitive Forward Blocking Voltage(gate open) (Note1)
Forward Current RMS(All Conduction Angles, TJ=68℃)
600 V
16 A
ITSM Peak Forward Surge Current, (1/2 Cycle, Sine Wave,50/60Hz)
I2t Circuit Fusing Considerations (tp=10ms)
155/170
120
A
A2s
PGM Peak Gate Power —Forward,(TC=68℃,Pulse With≤1.0us)
5.0 W
PG(AV)
IFGM
VRGM
TJ
Tstg
Average Gate Power —Forward,(Over any 20ms period)
Peak Gate Current—Forward,TJ=125℃(20µs,120PPS)
Peak Gate Voltage—Reverse,TJ=125℃(20µs,120PPS)
Junction Temperature
Storage Temperature
0.5
2.0
10
-40~125
-40~150
W
A
V
℃
℃
Mass
2.0 g
Note1.Although not recommended off -state voltages up to 800v ,may be applied with out damage, but the TRIAC may
switch, to the on-state .the rate of rise of current should not exceed 3A/us.
Thermal Characteristics
Symbol
Parameter
RӨJC
Thermal Resistance Junction to case
RӨJA
Thermal resistance Junction to Ambient
Value
3.0
120
Units
℃/W
℃/W
Rev.A Jun.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
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Electrical Characteristics(Tc=25℃ unless otherwise specified)
Symbol
Characteristics
Peak Forward or Reverse Blocking Current
TC=25℃
IDRM
(VD=VDRM/VRRM)
TC=125℃
VTM Forward "On" Voltage (Note2) (ITM=25A Peak @ TA =25℃)
Gate Trigger Current (Continuous dc)
T2+G+
IGT (VD=6 Vdc,RL=10Ω)
T2+G-
T2-G-
Gate Trigger Voltage (Continuous dc)
T2+G+
VGT (VD=6 Vdc,RL=10 OΩ)
T2+G-
T2-G-
VGD Gate threshold voltage (TJ=125℃,VD=0.5VDRM)
dV/dt
Critical rate of rise of commutation Voltage(VD=0.67VDRM)
dVcom/dt
Critical rate of rise On-State voltage
(VD=400V,Tj=125℃,dIcom/dt=0.5A/µs)
Holding Current
IH
(VD=12Vdc, intiationg current=20mA)
WTF16A60
Min.
-
-
-
-
-
-
-
-
-
0.2
10
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
10
2
1.4
30
30
30
1.5
1.5
1.5
-
-
Unit
µA
mA
V
mA
V
V
V/µs
50 -
- A/µs
- 25
- mA
Note2.Forward current applied for 1 ms maximum duration ,duty cycle
Steady, keep you advance
2/6
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WTF16A60
Fig .1 On-State Voltage
Fig.2 On-State current vs maximum
Power Disspation
Fig . 3 Gate Characteristeristics
Fig.4 On-State Current vs Allowable
case Temperature
Fig.5 Surge On-State Current Ration
(Non-Repetitive)
Gig.6 Gate Trigger Current vs
Junction Temperation
3/6
Steady, keep you advance
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Номер в каталоге | Описание | Производители |
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