WTF16A60H PDF даташит
Спецификация WTF16A60H изготовлена «Winsemi» и имеет функцию, называемую «Bi-Directional Triode Thyristor». |
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Детали детали
Номер произв | WTF16A60H |
Описание | Bi-Directional Triode Thyristor |
Производители | Winsemi |
логотип |
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WTF16A60H
Bi-Directional Triode Thyristor
Features
■ Repetitive Peak off-State Voltage: 600V
■ R.M.S On-State Current(IT(RMS)=16A)
■ Isolation Voltage ( VISO = 1500V AC )
■ High Commutation dV/dt.
■ High Junction temperature(TJ=150℃)
General Description
Winsemi Triac WTF16A60H is designed for full wave AC control applications.
It can be used as an ON/OFF function or for phase control operation.
By using an internal ceramic pad, the TO220F series provides voltage
insulated tab (rated at 2500V RMS) complying with UL standards (file
ref.:E347423)
Typical Application
■ Home Appliances : Washing Machines, Vacuum Cleaners, Rice
Cookers, Micro Wave Ovens, Hair Dryers, other
control applications
■ Industrial Use :
SMPS, Copier Machines, Motor Controls,
Dimmer, SSR, Heater Controls, Vending Machines,
other control applications
A1
A2
G
TO220F
Absolute Maximum Ratings (Tj=25℃ unless otherwise specified)
Symbol
Parameter
Condition
Ratings Units
VDRM/VRRM
I
T(RMS)
I
TSM
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
T = 1118 °C
J
50/60Hz, One cycle, Peak value, non-repetitive
I2t I2t
600
16
155/170
120
V
A
A
A2s
P
GM
P
G(AV)
I
GM
V
GM
T
J
T
STG
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
5
0.5
2.0
7.0
-40~+150
-40~+150
W
W
A
V
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal resistance, Junction-to-Case
Thermal resistance, Junction-to-Ambient
Value
Min Typ Max
--3
- - 150
Units
℃/W
℃/W
Rev. A Feb.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
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WTF16A60H
Electrical Characteristics (TJ = 25°C, RGK = 1 kΩ unless otherwise specified)
Symbol
Characteristics
Min Typ. Max Unit
IDRM/IRRM
off-state leakage current
(VAK= VDRM/VRRM Single phase, half wave)
TJ=150℃
-
-
3 mA
VTM Forward “On” voltage (IT=25A, Inst. Measurement)
- 1.2 1.4 V
IGT
Gate trigger current (continuous dc)
(VAK = 6 Vdc, RL = 10 Ω)
T2+,G+ - - 10
T2+,G-
- - 10 mA
T2-,G-
- - 10
VGT
Gate Trigger Voltage (Continuous dc) )
(VAK = 6 Vdc, RL = 10 Ω)
T2+,G+ - - 1.5
T2+,G-
- - 1.5 V
T2-,G-
- - 1.5
Gate threshold Voltage
VGD VD=1/2VDRM,
TJ=150℃ 0.1
-
-
V
Critical Rate of Rise of Off-State Voltage at Commutation
(dv/dt)C (VD=0.67VDRM ;(di/dt)c=-8A/ms)
TJ=150℃
5
-
- V/μs
IH Holding Current
IL latching current
- 25 - mA
- 25 - mA
Steady, keep you advance
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WTF16A60H
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Номер в каталоге | Описание | Производители |
WTF16A60 | Bi-Directional Triode Thyristor | Winsemi |
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WTF16A60H | Bi-Directional Triode Thyristor | Winsemi |
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