WTPB8A60CW Datasheet PDF - WINSEMI SEMICONDUCTOR
| Part Number | WTPB8A60CW | |
| Description | Bi-Directional Triode Thyristor | |
| Manufacturers | WINSEMI SEMICONDUCTOR | |
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WTPB8A60CW
Bi-Directional Triode Thyristor
Features
■ Repetitive Peak off-State Voltage:600V
■R.M.S On-State Current(IT(RMS)=8A
■ Low on-state voltage: VTM=1.55V(Max.)@ IT=11A
■ High Commutation dV/dt.
General Description
General purpose switching and phase control applications.
These devices are intended to be interfaced directly to micro-
controllers, logic integrated circuits and other low power gate
trigger circuits such as fan speed and temperature modulation
control, lighting control and static switching relay.
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
Symbol
VDRM
IT(RMS)
ITSM
I2t
PGM
PG(AV)
IFGM
VRGM
TJ,
Tstg
Parameter
Peak Repetitive Forward Blocking Voltage(gate open) (Note 1)
Forward Current RMS (All Conduction Angles, Tc=58℃)
Peak Forward Surge Current, (1/2 Cycle, Sine Wave, 50/60 Hz)
Circuit Fusing Considerations (t p= 10 ms)
Peak Gate Power — Forward, (Tc = 58°C,Pulse with≤1.0us)
Average Gate Power — Forward, (Over any 20ms period)
Peak Gate Current — Forward, Tj = 125°C (20 µs, 120 PPS)
Peak Gate Voltage — Reverse, Tj = 125°C (20 µs, 120 PPS)
Junction Temperature
Storage Temperature
Value
600
8
80/84
36
5
1
2
10
-40~125
-40~150
Units
V
A
A
A2s
W
W
A
V
℃
℃
Note1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC
may switch to the on-state. The rate of rise of current should not exceed 3A/us.
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
Min Typ Max
- - 1.6
- - 60
Units
℃/W
℃/W
Rev. B Nov.2008
Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved.
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TO-220 Package Dimension
WTPB8A60CW
Unit: mm
Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved.
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| Part Number | Description | MFRS |
| WTPB8A60CW | The function is Bi-Directional Triode Thyristor. WINSEMI SEMICONDUCTOR | |
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