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PDF NRVBB30H60CTT4G Data sheet ( Hoja de datos )
| Número de pieza | NRVBB30H60CTT4G | |
| Descripción | SWITCHMODE Power Rectifier | |
| Fabricantes | ON Semiconductor | |
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MBRB30H60CT-1G,
MBR30H60CTG,
MBRF30H60CTG,
MBRB30H60CTT4G,
NRVBB30H60CTT4G,
MBRJ30H60CTG
SWITCHMODE
Power Rectifier
60 V, 30 A
Features and Benefits
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
175C Operating Junction Temperature
30 A Total (15 A Per Diode Leg)
Guard−Ring for Stress Protection
AEC−Q101 Qualified and PPAP Capable
NRVBB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These are Pb−Free Devices*
Applications
Power Supply − Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight (Approximately): 1.5 Grams (I2PAK)
Weight (Approximately): 1.7 Grams (D2PAK)
Weight (Approximately): 1.9 Grams (TO−220 and TO−220FP)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260C Max. for 10 Seconds
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
30 AMPERES, 60 VOLTS
1
2, 4
3
4
4
1 23
I2PAK (TO−262)
CASE 418D
PLASTIC
STYLE 3
12 3
TO−220
CASE 221A
PLASTIC
STYLE 6
TO−220
CASE 221D
STYLE 3
TO−220
CASE 221AH
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 10
1
D2PAK
CASE 418B
ORDERING AND MARKING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
MBRB30H60CT/D
1 page  
MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G,
NRVBB30H60CTT4G, MBRJ30H60CTG
+VDD
MERCURY
SWITCH
S1
IL 10 mH COIL
ID
DUT
VD
IL
t0
BVDUT
ID
VDD
t1 t2 t
Figure 11. Test Circuit
The unclamped inductive switching circuit shown in
Figure 11 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
Figure 12. Current−Voltage Waveforms
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
EQUATION (1):
ǒ ǓWAVAL
[
1
2
LI
2
LPK
BVDUT
BVDUTVDD
EQUATION (2):
WAVAL [
1
2
LI
2
LPK
http://onsemi.com
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NRVBB30H60CTT4G.PDF ] | |
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