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SBRS8130LT3G PDF даташит

Спецификация SBRS8130LT3G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Schottky Power Rectifier».

Детали детали

Номер произв SBRS8130LT3G
Описание Schottky Power Rectifier
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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SBRS8130LT3G Даташит, Описание, Даташиты
MBRS130LT3G,
SBRS8130LT3G
Schottky Power Rectifier
Surface Mount Power Package
This device employs the Schottky Barrier principle in a large area
metaltosilicon power diode. Stateoftheart geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification,
or as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the
system.
Features
Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, TJ = 25C)
Small Compact Surface Mountable Package with JBend Leads
Highly Stable Oxide Passivated Junction
GuardRing for Stress Protection
ESD Ratings:
Human Body Model = 3B (> 16000 V)
Machine Model = C (> 400 V)
AECQ101 Qualified and PPAP Capable
SBRS8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are PbFree*
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 100 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Max. for 10 Seconds
Cathode Polarity Band
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
30 VOLTS
SMB
CASE 403A
MARKING DIAGRAM
AYWW
1BL3G
G
1BL3
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MBRS130LT3G
SBRS8130LT3G
Package
SMB
(PbFree)
SMB
(PbFree)
Shipping
2,500 /
Tape & Reel
2,500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
January, 2012 Rev. 9
1
Publication Order Number:
MBRS130LT3/D









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SBRS8130LT3G Даташит, Описание, Даташиты
MBRS130LT3G, SBRS8130LT3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
TL = 120C
TL = 110C
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFSM
30
1.0
2.0
40
V
A
A
Operating Junction Temperature
TJ 65 to +125 C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
JunctiontoLead
Thermal Resistance,
JunctiontoAmbient (TA = 25C, Min Pad, 1 oz copper)
JunctiontoAmbient (TA = 25C, 1” Pad, 1 oz copper)
Symbol
YJL
RqJA
Value
12
228.8
71.3
Unit
C/W
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 1.0 A, TJ = 25C)
(iF = 2.0 A, TJ = 25C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25C)
(Rated dc Voltage, TJ = 100C)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.
Symbol
VF
IR
Value
0.395
0.445
1.0
10
Unit
V
mA
10 10
TJ = 100C
1
25C
0.1
0.0
0.1 0.2 0.3 0.4 0.5 0.6
VF, INSTANTANEOUS VOLTAGE (V)
Figure 1. Typical Forward Voltage
0.7
1 TJ = 100C
25C
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
VF, MAXIMUM INSTANTANEOUS VOLTAGE (V)
Figure 2. Maximum Forward Voltage
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SBRS8130LT3G Даташит, Описание, Даташиты
MBRS130LT3G, SBRS8130LT3G
100
10
1.0 TJ = 100C
0.1 25C
0.01
0.001
0
3 6 9 12 15 18 21 24 27 30
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Leakage Current
100
10 TJ = 100C
1.0 25C
0.1
0.01
0.001
0 3 6 9 12 15 18 21 24 27 30
VR, REVERSE VOLTAGE (V)
Figure 4. Typical Maximum Reverse Leakage
Curent
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
100
DC
SQUARE WAVE
105 110 115 120 125
TC, CASE TEMPERATURE (C)
Figure 5. Current Derating (Case)
130
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
SQUARE
DC
0.2 0.4 0.6 0.8 1
1.2 1.4 1.6
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 6. Typical Power Dissipation
400
350
300
250
200
150
100
50
0
0
NOTE: TYPICAL CAPACITANCE
AT 0 V = 290 pF
4 8 12 16 20 24 28
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Typical Capacitance
32
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Номер в каталогеОписаниеПроизводители
SBRS8130LT3GSchottky Power RectifierON Semiconductor
ON Semiconductor

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