HN27C256HG PDF даташит
Спецификация HN27C256HG изготовлена «Hitachi Semiconductor» и имеет функцию, называемую «32768-word x 8-bit CMOS UV Erasable and Programmable ROM». |
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Детали детали
Номер произв | HN27C256HG |
Описание | 32768-word x 8-bit CMOS UV Erasable and Programmable ROM |
Производители | Hitachi Semiconductor |
логотип |
20 Pages
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HN27C256HG Series
32768-word × 8-bit CMOS UV Erasable and Programmable
ROM
ADE-203-
Maintenance only
Rev. 0.0
Dec. 1, 1995
Description
The Hitachi HN27C256HG is a 256-kbit ultraviolet erasable and electrically programmable ROM,
featuring sub-100-ns access times. The HN27C256HG realizes access time of 70 ns and 85 ns,
employing the advanced fine process and high speed circuitry technique. The timing conditions such as
access time or output hold time are designed as same as our byte-wide SRAMs’, allowing to use with
SRAMs on the same memory board by the same read timings. So its board design in 16-bit
microprocessor systems is easy. Also, the HN27C256HG realizes faster programming time than our
conventional 256-kbit EPROM by Hitachi’s Fast High-Reliability Programming Algorithm. Pin
arrangement, pin configuration and programming voltage are compatible with our 256-kbit EPROM
series, therefore existing programmers can be used with the HN27C256HG.
Features
• High speed: Access time 70/85 ns (max)
• Low power dissipation
Active mode: 30 mW (typ) (f = 1 MHz)
• High reliability and fast programming
Programming voltage: +12.5 V DC
Fast High-Reliability Programming Algorithm available
• Device identifier mode
Manufacturer code and device code
Ordering Information
Type No.
HN27C256HG-70
HN27C256HG-85
Access Time
70 ns
85 ns
Package
600-mil 28-pin cerdip (DG-28)
Note: This device is not available for new application.
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HN27C256HG Series
Pin Arrangement
VPP 1
A12 2
28 VCC
27 A14
A7 3
26 A13
A6 4
25 A8
A5 5
24 A9
A4 6
23 A11
A3 7
22 OE
A2 8
21 A10
A1 9
20 CE
A0 10
19 I/O7
I/O0 11
18 I/O6
I/O1 12
17 I/O5
I/O2 13
16 I/O4
VSS 14
15 I/O3
(Top View)
Pin Description
Pin Name
A0 – A14
I/O0 – I/O7
CE
OE
VCC
VPP
VSS
Function
Address
Input/output
Chip enable
Output enable
Power supply
Programming power supply
Ground
2
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Block Diagram
A4 – A9
A12 – A14
Address
I/O0
I/O7
CE
OE
VCC
VPP
VSS
H
HN27C256HG Series
512 × 512
Memory Matrix
Y-Gating
Y-Decoder
A0 – A3
A10, A11
H : High Threshold Inverter
3
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HN27C256H | 256K UV and OTP EPROM | Hitachi Semiconductor |
HN27C256HG | 32768-word x 8-bit CMOS UV Erasable and Programmable ROM | Hitachi Semiconductor |
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