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CAT28C256 PDF даташит

Спецификация CAT28C256 изготовлена ​​​​«Catalyst Semiconductor» и имеет функцию, называемую «32K-Bit Parallel E2PROM».

Детали детали

Номер произв CAT28C256
Описание 32K-Bit Parallel E2PROM
Производители Catalyst Semiconductor
логотип Catalyst Semiconductor логотип 

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CAT28C256 Даташит, Описание, Даташиты
CAT28C256
32K-Bit Parallel E2PROM
FEATURES
s Fast Read Access Times: 120/150ns
s Low Power CMOS Dissipation:
–Active: 25 mA Max.
–Standby: 150 µA Max.
s Simple Write Operation:
–On-Chip Address and Data Latches
–Self-Timed Write Cycle with Auto-Clear
s Fast Write Cycle Time:
–5ms Max
s CMOS and TTL Compatible I/O
DESCRIPTION
The CAT28C256 is a fast, low power, 5V-only CMOS
parallel E2PROM organized as 32K x 8-bits. It requires a
simple interface for in-system programming. On-chip
address and data latches, self-timed write cycle with auto-
clear and VCC power up/down write protection eliminate
additional timing and protection hardware. DATA Polling
and Toggle status bits signal the start and end of the self-
timed write cycle. Additionally, the CAT28C256 features
hardware and software write protection.
s Hardware and Software Write Protection
s Automatic Page Write Operation:
–1 to 64 Bytes in 5ms
–Page Load Timer
s End of Write Detection:
–Toggle Bit
–DATA Polling
s 100,000 Program/Erase Cycles
s 100 Year Data Retention
s Commerical, Industrial and Automotive
Temperature Ranges
The CAT28C256 is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed to
endure 100,000 program/erase cycles and has a data
retention of 100 years. The device is available in JEDEC
approved 28-pin DIP, 28-pin TSOP or 32-pin PLCC
packages.
BLOCK DIAGRAM
A6–A14
VCC
CE
OE
WE
ADDR. BUFFER
& LATCHES
INADVERTENT
WRITE
PROTECTION
CONTROL
LOGIC
A0–A5
TIMER
ADDR. BUFFER
& LATCHES
ROW
DECODER
HIGH VOLTAGE
GENERATOR
DATA POLLING
AND
TOGGLE BIT
COLUMN
DECODER
32,768 x 8
E2PROM
ARRAY
64 BYTE PAGE
REGISTER
I/O BUFFERS
I/O0–I/O7
5096 FHD F02
© 1998 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
1
Doc. No. 25020-0A 2/98









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CAT28C256 Даташит, Описание, Даташиты
CAT28C256
PIN CONFIGURATION
DIP Package (P)
PLCC Package (N)
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1 28
2 27
3 26
4 25
5 24
6 23
7 22
8 21
9 20
10 19
11 18
12 17
13 16
14 15
VCC
WE
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
4 3 2 1 32 31 30
5 29
6 28
7 27
8 26
9 25
10 24
11 23
12 22
13 21
14 15 16 17 18 19 20
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
5096 FHD F01
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
TSOP Package (8mm X 13.4mm) (T13)
PIN FUNCTIONS
Pin Name
Function
Pin Name
A0–A14
Address Inputs
WE
I/O0–I/O7
CE
OE
Data Inputs/Outputs
Chip Enable
Output Enable
VCC
VSS
NC
Function
Write Enable
5V Supply
Ground
No Connect
28 A10
27 CE
26 I/O7
25 I/O6
24 I/O5
23 I/O4
22 I/O3
21 GND
20 I/O2
19 I/O1
18 I/O0
17 A0
16 A1
15 A2
28C256 F03
Doc. No. 25020-0A 2/98
2









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CAT28C256 Даташит, Описание, Даташиты
CAT28C256
ABSOLUTE MAXIMUM RATINGS*
*COMMENT
Temperature Under Bias ................. –55°C to +125°C
Storage Temperature ....................... –65°C to +150°C
Voltage on Any Pin with
Respect to Ground(2) ........... –2.0V to +VCC + 2.0V
VCC with Respect to Ground ............... –2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25°C) ................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current(3) ........................ 100 mA
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation
of the device at these or any other conditions outside of
those listed in the operational sections of this specifica-
tion is not implied. Exposure to any absolute maximum
rating for extended periods may affect device perfor-
mance and reliability.
RELIABILITY CHARACTERISTICS
Symbol
NEND(1)
TDR(1)
VZAP(1)
ILTH(1)(4)
Parameter
Endurance
Data Retention
ESD Susceptibility
Latch-Up
Min.
104 or 105
100
2000
100
Max.
Units
Cycles/Byte
Years
Volts
mA
Test Method
MIL-STD-883, Test Method 1033
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 3015
JEDEC Standard 17
D.C. OPERATING CHARACTERISTICS
VCC = 5V ±10%, unless otherwise specified.
Limits
Symbol
Parameter
Min. Typ. Max. Units
Test Conditions
ICC VCC Current (Operating, TTL)
30 mA CE = OE = VIL, f=8MHz
All I/O’s Open
ICCC(5)
VCC Current (Operating, CMOS)
25 mA CE = OE = VILC, f=8MHz
All I/O’s Open
ISB
ISBC(6)
VCC Current (Standby, TTL)
VCC Current (Standby, CMOS)
1 mA CE = VIH, All I/O’s Open
150 µA CE = VIHC,
All I/O’s Open
ILI Input Leakage Current
–10
10 µA VIN = GND to VCC
ILO
VIH(6)
VIL(5)
Output Leakage Current
High Level Input Voltage
Low Level Input Voltage
–10
2
–0.3
10 µA
VCC +0.3
0.8
V
V
VOUT = GND to VCC,
CE = VIH
VOH High Level Output Voltage
2.4
V IOH = –400µA
VOL Low Level Output Voltage
0.4 V IOL = 2.1mA
VWI Write Inhibit Voltage
3.5
V
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC +0.5V, which may overshoot to VCC +2.0V for periods of less than 20 ns.
(3) Output shorted for no more than one second. No more than one output shorted at a time.
(4) Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to VCC +1V.
(5) VILC = –0.3V to +0.3V.
(6) VIHC = VCC –0.3V to VCC +0.3V.
3 Doc. No. 25020-0A 2/98










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