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CAT28C64B PDF даташит

Спецификация CAT28C64B изготовлена ​​​​«Catalyst Semiconductor» и имеет функцию, называемую «64K-Bit CMOS PARALLEL E2PROM».

Детали детали

Номер произв CAT28C64B
Описание 64K-Bit CMOS PARALLEL E2PROM
Производители Catalyst Semiconductor
логотип Catalyst Semiconductor логотип 

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CAT28C64B Даташит, Описание, Даташиты
CAT28C64B
64K-Bit CMOS PARALLEL E2PROM
FEATURES
s Fast Read Access Times:
– 120/150ns
s Low Power CMOS Dissipation:
– Active: 25 mA Max.
– Standby: 100 µA Max.
s Simple Write Operation:
– On-Chip Address and Data Latches
– Self-Timed Write Cycle with Auto-Clear
s Fast Write Cycle Time:
– 5ms Max.
s CMOS and TTL Compatible I/O
s Hardware and Software Write Protection
s Commercial, Industrial and Automotive
Temperature Ranges
s Automatic Page Write Operation:
– 1 to 32 Bytes in 5ms
– Page Load Timer
s End of Write Detection:
– Toggle Bit
DATA Polling
s 100,000 Program/Erase Cycles
s 100 Year Data Retention
DESCRIPTION
The CAT28C64B is a fast, low power, 5V-only CMOS
Parallel E2PROM organized as 8K x 8-bits. It requires a
simple interface for in-system programming. On-chip
address and data latches, self-timed write cycle with
auto-clear and VCC power up/down write protection
eliminate additional timing and protection hardware.
DATA Polling and Toggle status bits signal the start and
end of the self-timed write cycle. Additionally, the
CAT28C64B features hardware and software write pro-
tection.
The CAT28C64B is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed to
endure 100,000 program/erase cycles and has a data
retention of 100 years. The device is available in JEDEC-
approved 28-pin DIP, 28-pin TSOP, 28-pin SOIC, or, 32-
pin PLCC package .
BLOCK DIAGRAM
A5–A12
ADDR. BUFFER
& LATCHES
ROW
DECODER
8,192 x 8
E2PROM
ARRAY
VCC
INADVERTENT
WRITE
PROTECTION
HIGH VOLTAGE
GENERATOR
32 BYTE PAGE
REGISTER
CE
OE
WE
A0–A4
CONTROL
LOGIC
TIMER
ADDR. BUFFER
& LATCHES
DATA POLLING
AND
TOGGLE BIT
COLUMN
DECODER
I/O BUFFERS
I/O0–I/O7
5094 FHD F02
© 1999 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
1
Doc. No. 25006-0A 2/98 P-1









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CAT28C64B Даташит, Описание, Даташиты
CAT28C64B
PIN CONFIGURATION
DIP Package (P)
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1 28
2 27
3 26
4 25
5 24
6 23
7 22
8 21
9 20
10 19
11 18
12 17
13 16
14 15
VCC
WE
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
SOIC Package (J, K)
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1 28
2 27
3 26
4 25
5 24
6 23
7 22
8 21
9 20
10 19
11 18
12 17
13 16
14 15
VCC
WE
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
PLCC Package (N)
TSOP Package (8mm x 13.4mm) (T13)
4 3 2 1 32 31 30
A6 5
29 A8
A5 6
28 A9
A4 7
27 A11
A3 8
26 NC
A2 9
TOP VIEW
25 OE
A1 10
24 A10
A0 11
23 CE
NC 12
22 I/O7
I/O0 13
21 I/O6
14 15 16 17 18 19 20
OE
A11
A9
A8
NC
WE
VCC
NC
A12
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 A10
27 CE
26 I/O7
25 I/O6
24 I/O5
23 I/O4
22 I/O3
21 GND
20 I/O2
19 I/O1
18 I/O0
17 A0
16 A1
15 A2
5094 FHD F01
28C64B F03
PIN FUNCTIONS
Pin Name
Function
A0–A12
Address Inputs
I/O0–I/O7
CE
Data Inputs/Outputs
Chip Enable
OE Output Enable
Pin Name
WE
VCC
VSS
NC
Function
Write Enable
5 V Supply
Ground
No Connect
Doc. No. 25006-0A 2/98 P-1
2









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CAT28C64B Даташит, Описание, Даташиты
CAT28C64B
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. –55°C to +125°C
Storage Temperature ....................... –65°C to +150°C
Voltage on Any Pin with
Respect to Ground(2) ........... –2.0V to +VCC + 2.0V
VCC with Respect to Ground ............... –2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25°C) ................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current(3) ........................ 100 mA
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation
of the device at these or any other conditions outside of
those listed in the operational sections of this specifica-
tion is not implied. Exposure to any absolute maximum
rating for extended periods may affect device perfor-
mance and reliability.
RELIABILITY CHARACTERISTICS
Symbol
NEND(1)
TDR(1)
VZAP(1)
ILTH(1)(4)
Parameter
Endurance
Data Retention
ESD Susceptibility
Latch-Up
Min.
105
100
2000
100
Max.
Units
Cycles/Byte
Years
Volts
mA
Test Method
MIL-STD-883, Test Method 1033
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 3015
JEDEC Standard 17
MODE SELECTION
Mode
CE WE OE I/O Power
Read
L
H
L
DOUT
ACTIVE
Byte Write (WE Controlled)
L
H DIN ACTIVE
Byte Write (CE Controlled)
L H DIN ACTIVE
Standby, and Write Inhibit
H
X
X
High-Z
STANDBY
Read and Write Inhibit
X
H
H
High-Z
ACTIVE
CAPACITANCE TA = 25°C, f = 1.0 MHz, VCC = 5V
Symbol
Test
CI/O(1)
Input/Output Capacitance
CIN(1)
Input Capacitance
Max.
10
6
Units
pF
pF
Conditions
VI/O = 0V
VIN = 0V
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC +0.5V, which may overshoot to VCC +2.0V for periods of less than 20 ns.
(3) Output shorted for no more than one second. No more than one output shorted at a time.
(4) Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to VCC +1V.
3 Doc. No. 25006-0A 2/98 P-1










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