CEM4953H PDF даташит
Спецификация CEM4953H изготовлена «CET» и имеет функцию, называемую «Dual P-Channel Enhancement Mode Field Effect Transistor». |
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Детали детали
Номер произв | CEM4953H |
Описание | Dual P-Channel Enhancement Mode Field Effect Transistor |
Производители | CET |
логотип |
4 Pages
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CEM4953H
Dual P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -4.5A, RDS(ON) = 64mΩ @VGS = -10V.
RDS(ON) = 95mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.
D1 D1 D2 D2
8765
SO-8
1
1234
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS -30
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID -4.5
IDM -18
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
V
V
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2012.July
http://www.cetsemi.com
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CEM4953H
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
-30
-1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
VGS = -10V, ID = -3.8A
VGS = -4.5V, ID = -3A
-1
-3 V
52 64 mΩ
70 95 mΩ
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = -15V, VGS = 0V,
f = 1.0 MHz
545
95
65
pF
pF
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -15V, ID = -1A,
VGS = -10V, RGEN = 6Ω
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -15V, ID = -4.8A,
VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
10
3
28
4
9.3
3.2
1.5
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -1.5A
-1.5 A
-1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
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5
-VGS=10,8,6,4V
4
-VGS=3V
3
2
1
0
0 0.3 0.6 0.9 1.2 1.5 1.8
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
600
500 Ciss
400
300
200
100
0
0
3
Coss
Crss
69
12 15
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3
CEM4953H
10
8
6
4
25 C
2 TJ=125 C
-55 C
0
01 2 3 4 5 6
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2 ID=-3.8A
1.9 VGS=-10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
102 VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
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