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WFP10N60 PDF даташит

Спецификация WFP10N60 изготовлена ​​​​«Wisdom technologies» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв WFP10N60
Описание N-Channel MOSFET
Производители Wisdom technologies
логотип Wisdom technologies логотип 

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WFP10N60 Даташит, Описание, Даташиты
HIGH VOLTAGE N-Channel MOSFET 
 
 
WFP10N60
600V N-Channel MOSFET
Features
Low Intrinsic Capacitances 
Excellent Switching Characteristics 
Extended Safe Operating Area 
Unrivalled Gate Charge :Qg= 33nC (Typ.)
BVDSS=600V,ID=10A
RDS(on) :0.73 (Max) @VG=10V
100% Avalanche Tested
 
GDS
D
!
◀▲
G!
!   
S
 
TO220   
GGate,DDrain,SSourse 
Absolute Maximum Ratings Tc=25unless other wise noted
Symbol
VDSS
ID
VGS
EAS
IAR
PD
TJ,TSTG
TL
Parameter
Drain-Sourse Voltage
Drain Current
-continuous (Tc=25)
-continuous (Tc=100)
Gate-Sourse Voltage
Single Plused Avanche Energy (Note1)
Avalanche Current
(Note2)
Power Dissipation (Tc=25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
WFP10N60
600
10
3.4
±30
520
10
156
-55 ~ +150
300
Units
V
A
A
V
mJ
A
W
Thermal Characteristics 
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance,Junction to Case
Thermal Resistance,Case to Sink
Thermal Resistance,Junction to Ambient
Typ.
--
0.5
--
Max
0.8
--
62.5
Units
/W
/W
/W
www.wisdom-technologie  s.com  
    Rev.A0,August , 2010 | 
1 
 









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WFP10N60 Даташит, Описание, Даташиты
HIGH VOLTAGE N-Channel MOSFET 
Electrical Characteristics Tc=25unless other wise noted 
Symbol
Parameter
Test Condition Min. Typ. Max Units
Off Characteristics
BVDSS
BVDSS/
△TJ
Drain-Sourse Breakdown Voltage
Breakdown Voltage Temperature
Conficient
ID=250μAVGS=0
ID=250μA,Reference
to 25
600
--
--
0.7
-- V
-- V/
IDSS
Zero Gate Voltage Drain Current
Vds=600V, Vgs=0V
Vds=480V, Tc=125
--
--
1 μA
10 μA
IGSSF
Gate-body leakage Current,
Forward
Vgs=+30V, Vds=0V -- -- 100 nA 
IGSSR
Gate-body leakage Current,
Reverse
Vgs=-30V, Vds=0V
-- -- -100 nA 
On Characteristics 
VGS(th)
RDS(on)
Date Threshold Voltage
Static Drain-Sourse
On-Resistance
Id=250uA,Vds=Vgs 2 -- 4 V
Id=5A,Vgs=10V
-- -- 0.73
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25VVGS=0
f=1.0MHz
--
--
--
1570
166
18
2040
215
24
pF
pF
pF
Switching Characteristics 
Td(on)
Tr
Td(off)
Tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Sourse Charge
Gate-Drain Charge
VDD=300VID=10A
RG=25Ω (Note 3,4)
VDS=480,VGS=10V
ID=10A (Note 3,4)
--
--
--
--
--
--
23 55
66 150
144 300
77 165
44 57
6.7 --
18.5 --
nS
nS
nS
nS
nC
nC
nC
Drain-Sourse Diode Characteristics and Maximum Ratings
IS Maximun Continuous Drain-Sourse Diode Forward
Current
-- -- 10 A
ISM Maximun Plused Drain-Sourse DiodeForwad Current
VSD
Drain-Sourse Diode Forward
Voltage
Id=10A
-- --
A
-- -- 1.4 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS=10A,VGS =0V
-- 340 --
nS
diF/dt=100A/μs (Note3)
--
3.2
--
μC
*Notes  1, L=10.6mH, IAS=9.5A, VDD=50V, RG=25, Starting TJ =25°C 
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width 300μs, Duty Cycle 2%
4, Essentially Independent of Operating Temperature 
www.wisdom-technologies  .com  
    Rev.A0,August , 2010 | 
2 
 









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WFP10N60 Даташит, Описание, Даташиты
Typical Characteristics
HIGH VOLTAGE N-Channel MOSFET 
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
101 6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
100
Notes :
1. 250μ s Pulse Test
2. T = 25
C
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
2.0
1.5
VGS = 10V
1.0
0.5 VGS = 20V
0.0
0
Note : T = 25
J
5 10 15 20 25 30 35
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
3000
2500
2000
1500
1000
500
0
10-1
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss ds gd
C =C
rss gd
Notes ;
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150oC
25oC
100
-55oC
10-1
2
Notes :
1. V = 40V
2. 25DS0μ s Pulse Test
468
V , Gate-Source Voltage [V]
GS
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
25
Notes :
1. V = 0V
2. 25GS0μ s Pulse Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 120V
10
VDS = 300V
V = 480V
8 DS
6
4
2
Note : I = 9.5A
D
0
0 10 20 30 40 50
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
www.wisdom-technologie s.com  
    Rev.A0,August , 2010 | 
3 
 










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