WFP10N60 PDF даташит
Спецификация WFP10N60 изготовлена «Wisdom technologies» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
Номер произв | WFP10N60 |
Описание | N-Channel MOSFET |
Производители | Wisdom technologies |
логотип |
6 Pages
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HIGH VOLTAGE N-Channel MOSFET
WFP10N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances
□ Excellent Switching Characteristics
□ Extended Safe Operating Area
□ Unrivalled Gate Charge :Qg= 33nC (Typ.)
□ BVDSS=600V,ID=10A
□ RDS(on) :0.73 Ω (Max) @VG=10V
□ 100% Avalanche Tested
GDS
D
!
●
◀▲
G!
●
●
!
S
TO‐220
G‐Gate,D‐Drain,S‐Sourse
Absolute Maximum Ratings Tc=25℃ unless other wise noted
Symbol
VDSS
ID
VGS
EAS
IAR
PD
TJ,TSTG
TL
Parameter
Drain-Sourse Voltage
Drain Current
-continuous (Tc=25℃)
-continuous (Tc=100℃)
Gate-Sourse Voltage
Single Plused Avanche Energy (Note1)
Avalanche Current
(Note2)
Power Dissipation (Tc=25℃)
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
WFP10N60
600
10
3.4
±30
520
10
156
-55 ~ +150
300
Units
V
A
A
V
mJ
A
W
℃
℃
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance,Junction to Case
Thermal Resistance,Case to Sink
Thermal Resistance,Junction to Ambient
Typ.
--
0.5
--
Max
0.8
--
62.5
Units
℃/W
℃/W
℃/W
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HIGH VOLTAGE N-Channel MOSFET
Electrical Characteristics Tc=25℃ unless other wise noted
Symbol
Parameter
Test Condition Min. Typ. Max Units
Off Characteristics
BVDSS
△BVDSS/
△TJ
Drain-Sourse Breakdown Voltage
Breakdown Voltage Temperature
Conficient
ID=250μA,VGS=0
ID=250μA,Reference
to 25℃
600
--
--
0.7
-- V
-- V/℃
IDSS
Zero Gate Voltage Drain Current
Vds=600V, Vgs=0V
Vds=480V, Tc=125℃
--
--
1 μA
10 μA
IGSSF
Gate-body leakage Current,
Forward
Vgs=+30V, Vds=0V -- -- 100 nA
IGSSR
Gate-body leakage Current,
Reverse
Vgs=-30V, Vds=0V
-- -- -100 nA
On Characteristics
VGS(th)
RDS(on)
Date Threshold Voltage
Static Drain-Sourse
On-Resistance
Id=250uA,Vds=Vgs 2 -- 4 V
Id=5A,Vgs=10V
-- -- 0.73 Ω
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25V,VGS=0,
f=1.0MHz
--
--
--
1570
166
18
2040
215
24
pF
pF
pF
Switching Characteristics
Td(on)
Tr
Td(off)
Tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Sourse Charge
Gate-Drain Charge
VDD=300V,ID=10A
RG=25Ω (Note 3,4)
VDS=480,VGS=10V,
ID=10A (Note 3,4)
--
--
--
--
--
--
23 55
66 150
144 300
77 165
44 57
6.7 --
18.5 --
nS
nS
nS
nS
nC
nC
nC
Drain-Sourse Diode Characteristics and Maximum Ratings
IS Maximun Continuous Drain-Sourse Diode Forward
Current
-- -- 10 A
ISM Maximun Plused Drain-Sourse DiodeForwad Current
VSD
Drain-Sourse Diode Forward
Voltage
Id=10A
-- --
A
-- -- 1.4 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS=10A,VGS =0V
-- 340 --
nS
diF/dt=100A/μs (Note3)
--
3.2
--
μC
*Notes 1, L=10.6mH, IAS=9.5A, VDD=50V, RG=25Ω, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
4, Essentially Independent of Operating Temperature
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Typical Characteristics
HIGH VOLTAGE N-Channel MOSFET
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
101 6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
100
※ Notes :
1. 250μ s Pulse Test
2. T = 25℃
C
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
2.0
1.5
VGS = 10V
1.0
0.5 VGS = 20V
0.0
0
※ Note : T = 25℃
J
5 10 15 20 25 30 35
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
3000
2500
2000
1500
1000
500
0
10-1
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss ds gd
C =C
rss gd
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150oC
25oC
100
-55oC
10-1
2
※ Notes :
1. V = 40V
2. 25DS0μ s Pulse Test
468
V , Gate-Source Voltage [V]
GS
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1. V = 0V
2. 25GS0μ s Pulse Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 120V
10
VDS = 300V
V = 480V
8 DS
6
4
2
※ Note : I = 9.5A
D
0
0 10 20 30 40 50
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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