DataSheet26.com

WFF10N60 PDF даташит

Спецификация WFF10N60 изготовлена ​​​​«Wisdom technologies» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв WFF10N60
Описание N-Channel MOSFET
Производители Wisdom technologies
логотип Wisdom technologies логотип 

6 Pages
scroll

No Preview Available !

WFF10N60 Даташит, Описание, Даташиты
HIGH VOLTAGE N-Channel MOSFET 
 
 
WFF10N60
600V N-Channel MOSFET
Features
Low Intrinsic Capacitances 
Excellent Switching Characteristics 
Extended Safe Operating Area 
Unrivalled Gate Charge :Qg= 33nC (Typ.)
BVDSS=600V,ID=10A
RDS(on) :0.73 (Max) @VG=10V
100% Avalanche Tested
 
GD S
 
 
D
G
  
S
TO220F   
GGate,DDrain,SSourse 
Absolute Maximum Ratings Tc=25unless other wise noted
Symbol
VDSS
ID
VGS
EAS
IAR
PD
TJ,TSTG
TL
Parameter
Drain-Sourse Voltage
Drain Current
-continuous (Tc=25)
-continuous (Tc=100)
Gate-Sourse Voltage
Single Plused Avanche Energy (Note1)
Avalanche Current
(Note2)
Power Dissipation (Tc=25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
WFF10N60
600
10*
3.3*
±30
520
10
50
-55 ~ +150
300
Units
V
A
A
V
mJ
A
W
Thermal Characteristics 
Symbol
Parameter
RθJC Thermal Resistance,Junction to Case
RθJA Thermal Resistance,Junction to Ambient
* Drain current limited by maximum junction temperature.
Typ.
--
--
Max
2.5
62.5
Units
/W
/W
www.wisdo  m-technolog  ies.com
    Rev.A0,August , 2010 |  1 
 









No Preview Available !

WFF10N60 Даташит, Описание, Даташиты
HIGH VOLTAGE N-Channel MOSFET 
Electrical Characteristics Tc=25unless other wise noted 
Symbol
Parameter
Test Condition Min. Typ. Max Units
Off Characteristics
BVDSS Drain-Sourse Breakdown Voltage ID=250μAVGS=0 600 -- -- V
BVDSS/ Breakdown Voltage Temperature ID=250μA,Reference
△TJ Conficient
to 25
--
0.7
--
V/
IDSS
Zero Gate Voltage Drain Current
Vds=600V, Vgs=0V
Vds=480V, Tc=125
--
-- 1 μA
10 μA
IGSSF
Gate-body leakage Current,
Forward
Vgs=+30V, Vds=0V
-- -- 100 nA 
IGSSR
Gate-body leakage Current,
Reverse
Vgs=-30V, Vds=0V
-- -- -100 nA 
On Characteristics
VGS(th)
RDS(on)
Date Threshold Voltage
Static Drain-Sourse
On-Resistance
Id=250uA,Vds=Vgs
Id=5A,Vgs=10V
2 -- 4 V
-- -- 0.73
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25VVGS=0
f=1.0MHz
-- 1570 2040 pF
-- 166 215 pF
-- 18 24 pF
Switching Characteristics
Td(on)
Tr
Td(off)
Tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Sourse Charge
Gate-Drain Charge
VDD=300VID=10A
RG=25Ω (Note 3,4)
VDS=480,VGS=10V
ID=10A (Note 3,4)
--
--
--
--
--
--
23 55
66 150
144 300
77 165
44 57
6.7 --
18.5 --
nS
nS
nS
nS
nC
nC
nC
Drain-Sourse Diode Characteristics and Maximum Ratings
IS
ISM
VSD
trr
Qrr
*Notes 
Maximun Continuous Drain-Sourse Diode Forward Current --
Maximun Plused Drain-Sourse DiodeForwad Current
--
Drain-Sourse Diode Forward
Voltage
Id=10A
--
Reverse Recovery Time
Reverse Recovery Charge
IS=10A,V GS =0V
diF/dt=100A/μs (Note3)
--
--
1, L=10.6mH, IAS=9.5A, VDD=50V, RG=25, Starting TJ =25°C 
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width 300μs, Duty Cycle 2%
4, Essentially Independent of Operating Temperature 
-- 10 A
-- 38 A
-- 1.4 V
340 --
nS
3.2 -- μC
www.wisdo  m-technolo gies.com
    Rev.A0,August , 2010 |  2 
 









No Preview Available !

WFF10N60 Даташит, Описание, Даташиты
Typical Characteristics
HIGH VOLTAGE N-Channel MOSFET 
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
101 6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
100
Notes :
1. 250μ s Pulse Test
2. T = 25
C
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
2.0
1.5
V = 10V
GS
1.0
0.5 VGS = 20V
0.0
0
Note : T = 25
J
5 10 15 20 25 30 35
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
3000
2500
2000
1500
1000
500
0
10-1
Ciss
C
oss
C
rss
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss ds gd
C =C
rss gd
Notes ;
1. VGS = 0 V
2. f = 1 MHz
100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
101
150oC
25oC
100
-55oC
10-1
2
Notes :
1. V = 40V
2. 25DS0μ s Pulse Test
468
V , Gate-Source Voltage [V]
GS
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
25
Notes :
1. V = 0V
2. 25GS0μ s Pulse Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 120V
10
V = 300V
DS
8 VDS = 480V
6
4
2
Note : I = 9.5A
D
0
0 10 20 30 40 50
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
www.wisd  om-technolo  gies.com
    Rev.A0,August , 2010 | 
3 
 










Скачать PDF:

[ WFF10N60.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
WFF10N60N-Channel MOSFETWisdom technologies
Wisdom technologies
WFF10N60Silicon N-Channel MOSFETWINSEMI SEMICONDUCTOR
WINSEMI SEMICONDUCTOR
WFF10N65Silicon N-Channel MOSFETWINSEMI SEMICONDUCTOR
WINSEMI SEMICONDUCTOR
WFF10N65LSilicon N-Channel MOSFETWinsemi
Winsemi

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск