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CAT28LV65 PDF даташит

Спецификация CAT28LV65 изготовлена ​​​​«Catalyst Semiconductor» и имеет функцию, называемую «64K-Bit CMOS PARALLEL E2PROM».

Детали детали

Номер произв CAT28LV65
Описание 64K-Bit CMOS PARALLEL E2PROM
Производители Catalyst Semiconductor
логотип Catalyst Semiconductor логотип 

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CAT28LV65 Даташит, Описание, Даташиты
Preliminary
CAT28LV65
64K-Bit CMOS PARALLEL E2PROM
FEATURES
s 3.0V to 3.6V Supply
s Read Access Times:
– 250/300/350ns
s Low Power CMOS Dissipation:
– Active: 8 mA Max.
– Standby: 100 µA Max.
s Simple Write Operation:
– On-Chip Address and Data Latches
– Self-Timed Write Cycle with Auto-Clear
s Fast Write Cycle Time:
– 5ms Max.
s Commercial, Industrial and Automotive
Temperature Ranges
DESCRIPTION
The CAT28LV65 is a low voltage, low power, CMOS
parallel E2PROM organized as 8K x 8-bits. It requires a
simple interface for in-system programming. On-chip
address and data latches, self-timed write cycle with
auto-clear and VCC power up/down write protection
eliminate additional timing and protection hardware.
DATA Polling, RDY/BUSY and Toggle status bit signal
the start and end of the self-timed write cycle. Addition-
ally, the CAT28LV65 features hardware and software
write protection.
s CMOS and TTL Compatible I/O
s Automatic Page Write Operation:
– 1 to 32 Bytes in 5ms
– Page Load Timer
s End of Write Detection:
– Toggle Bit
DATA Polling
– RDY/BUSY
s Hardware and Software Write Protection
s 100,000 Program/Erase Cycles
s 100 Year Data Retention
The CAT28LV65 is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed to
endure 100,000 program/erase cycles and has a data
retention of 100 years. The device is available in JEDEC
approved 28-pin DIP, 28-pin TSOP, 28-pin SOIC or 32-
pin PLCC packages.
BLOCK DIAGRAM
A5–A12
VCC
CE
OE
WE
A0–A4
RDY/BUSY
ADDR. BUFFER
& LATCHES
INADVERTENT
WRITE
PROTECTION
CONTROL
LOGIC
TIMER
ADDR. BUFFER
& LATCHES
ROW
DECODER
HIGH VOLTAGE
GENERATOR
DATA POLLING,
RDY/BUSY &
TOGGLE BIT
COLUMN
DECODER
8,192 x 8
E2PROM
ARRAY
32 BYTE PAGE
REGISTER
I/O BUFFERS
I/O0–I/O7
28LV65 F01
© 1998 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
1
Doc. No. 25041-00 2/98









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CAT28LV65 Даташит, Описание, Даташиты
CAT28LV65
Preliminary
PIN CONFIGURATION
DIP Package (P)
RDY/BUSY
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1 28
2 27
3 26
4 25
5 24
6 23
7 22
8 21
9 20
10 19
11 18
12 17
13 16
14 15
VCC
WE
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
SOIC Package (J, K)
RDY/BUSY
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1 28
2 27
3 26
4 25
5 24
6 23
7 22
8 21
9 20
10 19
11 18
12 17
13 16
14 15
VCC
WE
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
PLCC Package (N)
OE
A11
A9
4 3 2 1 32 31 30
A6 5
29 A8
A5 6
28 A9
A4 7
27 A11
A8
NC
WE
Vcc
RDY/BUSY
A12
A3 8
A2 9
TOP VIEW
A1 10
A0 11
26 NC
25 OE
24 A10
23 CE
A7
A6
A5
A4
A3
NC 12
22 I/O7
I/O0 13
21 I/O6
14 15 16 17 18 19 20
1
2
3
4
5
6
7
8
9
10
11
12
13
14
TSOP Top View (8mm x 13.4mm) (T13)
28 A10
27 CE
26 I/07
25 I/06
24 I/05
23 I/04
22 I/03
21 GND
20 I/O2
19 I/O1
18 I/O0
17 A0
16 A1
15 A2
28LV65 F04
PIN FUNCTIONS
Pin Name
Function
A0–A12
Address Inputs
I/O0–I/O7
CE
Data Inputs/Outputs
Chip Enable
OE Output Enable
RDY/BSY
Ready/Busy Status
Pin Name
WE
VCC
VSS
NC
Function
Write Enable
3.0 to 3.6 V Supply
Ground
No Connect
Doc. No. 25041-00 2/98
2









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CAT28LV65 Даташит, Описание, Даташиты
Preliminary
CAT28LV65
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. –55°C to +125°C
Storage Temperature ....................... –65°C to +150°C
Voltage on Any Pin with
Respect to Ground(2) ........... –2.0V to +VCC + 2.0V
VCC with Respect to Ground ............... –2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25°C) ................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current(3) ........................ 100 mA
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation
of the device at these or any other conditions outside of
those listed in the operational sections of this specifica-
tion is not implied. Exposure to any absolute maximum
rating for extended periods may affect device perfor-
mance and reliability.
RELIABILITY CHARACTERISTICS
Symbol
NEND(1)
TDR(1)
VZAP(1)
ILTH(1)(4)
Parameter
Endurance
Data Retention
ESD Susceptibility
Latch-Up
Min.
105
100
2000
100
Max.
Units
Cycles/Byte
Years
Volts
mA
Test Method
MIL-STD-883, Test Method 1033
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 3015
JEDEC Standard 17
MODE SELECTION
Mode
CE WE OE I/O Power
Read
L
H
L
DOUT
ACTIVE
Byte Write (WE Controlled)
L
H DIN ACTIVE
Byte Write (CE Controlled)
L H DIN ACTIVE
Standby, and Write Inhibit
H
X
X
High-Z
STANDBY
Read and Write Inhibit
X
H
H
High-Z
ACTIVE
CAPACITANCE TA = 25°C, f = 1.0 MHz
Symbol
Test
CI/O(1)
Input/Output Capacitance
CIN(1)
Input Capacitance
Max.
10
6
Units
pF
pF
Conditions
VI/O = 0V
VIN = 0V
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC +0.5V, which may overshoot to VCC +2.0V for periods of less than 20 ns.
(3) Output shorted for no more than one second. No more than one output shorted at a time.
(4) Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to VCC +1V.
3 Doc. No. 25041-00 2/98










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