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HCU7N70S PDF даташит

Спецификация HCU7N70S изготовлена ​​​​«SemiHow» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв HCU7N70S
Описание N-Channel MOSFET
Производители SemiHow
логотип SemiHow логотип 

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HCU7N70S Даташит, Описание, Даташиты
HCU7N70S
700V N-Channel Super Junction MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 9 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 0.95 ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
Sep 2014
BVDSS = 700 V
RDS(on) typ = 0.95 ȍ
ID = 5.0 A
I-PAK
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Static
AC (f>1 Hz)
700
5.0
3.2
13.0
ρ20
ρ30
EAS
IAR
EAR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
40
1.2
0.1
50
PD
TJ, TSTG
TL
Power Dissipation (TC = 25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
28
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Tsold
Parameter
Junction-to-Case
Junction-to-Ambient
Soldering temperature, wave soldering
only allowed at leads
Typ.
--
--
--
Max.
4.4
60.5
260
Units
V
A
A
A
V
V
mJ
A
mJ
V/ns
W
Units
/W
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HCU7N70S Даташит, Описание, Даташиты
Package Marking and Odering Information
Device Marking
HCU7N70S
HCU7N70S
Week Marking
YWWX
YWWXg
Package
TO-251
TO-251
Packing
Tube
Tube
Quantity
80
80
RoHS Status
Pb Free
Halogen Free
Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 2.3 A
2.5
--
Off Characteristics
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250
VDS = 700 V, VGS = 0 V
VDS = 560 V, TJ = 125
VGS = ρ20 V, VDS = 0 V
700
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 100 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Vplateau
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Plateau Voltage
VDS = 350 V, ID = 2.3 A,
RG = 10 Ÿ
(Note 4,5)
VDS = 560 V, ID = 2.3 A
VGS = 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
--
--
--
--
--
--
--
--
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 2.3 A, VGS = 0 V
--
trr Reverse Recovery Time
--
Qrr Reverse Recovery Charge
Irrm Peak Reverse Recovery Current
IS = 2.3 A, VGS = 0 V
diF/dt = 100 A/ȝV (Note 4)
--
--
Typ Max Units
--
0.95
4.5
1.1
V
Ÿ
-- -- V
-- 1
-- 10
-- ρ100
340 440
20 26
5.0 6.5
20 50
25 60
60 130
30 70
9.0 12 nC
2.0 -- nC
3.0 -- nC
5.0 --
V
-- 6.0
-- 15.2
-- 1.2
150 --
1.1 --
12 --
A
V
ȝ&
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=15mH, IAS=2.3A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$, di/dt”$ȝV, VDD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
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HCU7N70S Даташит, Описание, Даташиты
Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
* Notes :
1. 300us Pulse Test
2. T = 25oC
C
10-1
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
4
3
VGS = 10V
2
1 VGS = 20V
Note : TJ = 25oC
0
0 3 6 9 12
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
2400
1800
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss ds gd
Crss = Cgd
1200
600
10-1
Coss
* Note ;
1. V = 0 V
GS
Ciss 2. f = 1 MHz
Crss
100 101 102
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10
25oC
150oC
-25oC
* Notes :
1. VDS= 20V
2. 300us Pulse Test
0.1
2 4 6 8 10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10
1
150oC
25oC
0.1
0.0
* Notes :
1. V = 0V
GS
2. 300us Pulse Test
0.2 0.4 0.6 0.8 1.0
V , Source-Drain Voltage [V]
SD
1.2
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10 VDS = 140V
VDS = 350V
8
V = 560V
DS
6
4
2
Note : ID = 2.3A
0
0 2 4 6 8 10
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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