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HFD8N60U PDF даташит

Спецификация HFD8N60U изготовлена ​​​​«SemiHow» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв HFD8N60U
Описание N-Channel MOSFET
Производители SemiHow
логотип SemiHow логотип 

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HFD8N60U Даташит, Описание, Даташиты
HFD8N60U / HFU8N60U
600V N-Channel MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 22.0 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
May 2014
BVDSS = 600 V
RDS(on) typ ȍ
ID = 6.0 A
D-PAK I-PAK
2
1
3
HFD8N60U
1
2
3
HFU8N60U
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
6.0
3.8
24.0
ρ30
280
6.0
9.8
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25)*
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.5
98
0.78
-55 to +150
300
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
RșJA
Junction-to-Case
Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
1.28
50
110
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
Units
/W
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HFD8N60U Даташит, Описание, Даташиты
Package Marking and Odering Information
Device Marking
HFD8N60U
HFD8N60U
HFU8N60U
HFU8N60U
Week Marking
YWWX
YWWXg
YWWX
YWWXg
Package
TO-252
TO-252
TO-251
TO-251
Packing
Reel
Reel
Tube
Tube
Quantity
2,500
2,500
80
80
RoHS Status
Pb Free
Halogen Free
Pb Free
Halogen Free
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 3.0 A
2.5
--
Off Characteristics
BVDSS
ǻBVDSS
/ǻTJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
Dynamic Characteristics
VGS = 0 V, ID = 250
ID = 250 , Referenced to 25
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125
VGS = ρ30 V, VDS = 0 V
600
--
--
--
--
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 7.5 A,
RG = 25 Ÿ
(Note 4,5)
VDS = 480 V, ID = 7.5 A,
VGS = 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
--
--
--
--
--
--
--
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 6.0 A, VGS = 0 V
--
trr Reverse Recovery Time
IS = 7.5 A, VGS = 0 V
--
Qrr Reverse Recovery Charge
diF/dt = 100 A/ȝV (Note 4) --
Typ Max Units
--
0.96
4.5
1.2
V
Ÿ
-- -- V
0.6 -- V/
-- 1
-- 10
-- ρ100
1200
100
11.0
1560
130
14.5
35 70
50 100
120 240
50 100
22.0 29.0
6.5 --
6.5 --
nC
nC
nC
-- 6.0
-- 24
-- 1.4
350 --
3.3 --
A
V
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=9.0mH, IAS=7.5A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$di/dt”$ȝV, VDD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
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HFD8N60U Даташит, Описание, Даташиты
Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
10-1
100
* Notes :
1. 300us Pulse Test
2. TC = 25oC
101
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
3
2 VGS = 10V
1 VGS = 20V
Note : TJ = 25oC
0
0 4 8 12 16 20
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
2000
1600
1200
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
800
400
0
10-1
Coss
* Note ;
1. VGS = 0 V
2. f = 1 MHz
Crss
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10
25oC
1 150oC
-25oC
* Notes :
1. VDS= 30V
2. 300us Pulse Test
0.1
2 V4 GS, Gate-Sour6ce Voltage [V]8 10
Figure 2. Transfer Characteristics
10
1
150oC 25oC
0.1
0.0
* Notes :
1. VGS= 0V
2. 300us Pulse Test
0.2 0.4 0.6 0.8
VSD, Source-Drain Voltage [V]
1.0
1.2
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
VDS = 120V
VDS = 300V
VDS = 480V
8
6
4
2
Note : ID = 7.5A
0
0 5 10 15 20 25
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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