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HFP730F PDF даташит

Спецификация HFP730F изготовлена ​​​​«SemiHow» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв HFP730F
Описание N-Channel MOSFET
Производители SemiHow
логотип SemiHow логотип 

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HFP730F Даташит, Описание, Даташиты
Dec 2016
HFP730F / HFS730F
400V N-Channel MOSFET
Features
‰ Originative New Design
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ 100% Avalanche Tested
‰ RoHS Compliant
HFP730F
TO-220
Key Parameters
Parameter
BVDSS
ID
RDS(on), Typ
Qg, Typ
Value
400
6
0.8
13
HFS730F
TO-220F
Symbol
Unit
V
A
ȍ
nC
S
D
G
S
D
G
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
TO-220
TO-220F
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
400
6.0 6.0 *
3.6 3.6 *
24 24 *
ρ30
250
6.0
7.6
4.5
PD
Power Dissipation (TC = 25)
- Derate above 25
76
0.61
29
0.23
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
* Drain current limited by maximum junction temperature
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
TO-220
1.65
0.5
62.5
TO-220F
4.3
--
62.5
Unit
/W
/W
/W
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HFP730F Даташит, Описание, Даташиты
Electrical Characteristics TJ=25unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Unit
On Characteristics
VGS Gate Threshold Voltage
RDS(ON)
Static Drain-Source
On-Resistance
VDS = VGS, ID ȝ$
VGS = 10 V, ID = 3 A
2.0 -- 4.0
-- 0.8 1.0
V
Ÿ
gFS Forward Transconductance
VDS = 30 V ID = 3 A
-- 4.2 --
S
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS = 0 V, ID ȝ$
VDS = 400 V, VGS = 0 V
VDS = 400 V, TC = 125
VGS = ρ30 V, VDS = 0 V
400 -- -- V
-- -- 10 ȝ$
-- -- 100 ȝ$
-- -- ρ100 nA
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
530 690
pF
-- 84 110 pF
-- 11 14.5 pF
Switching Characteristics
td(on)
Turn-On Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 200 V, ID = 6 A,
RG = 25 Ÿ
(Note 4,5)
VDS = 320 V, ID = 6 A,
VGS = 10 V
(Note 4,5)
-- 20 60 ns
-- 21 52 ns
-- 55 120 ns
-- 22 54 ns
-- 13 17 nC
-- 2.8 -- nC
-- 5.4 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 6 A
diF/dt = 100 A/ȝV
-- -- 6
A
-- -- 24
-- -- 1.4 V
-- 220 --
ns
-- 1.1 -- ȝ&
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=12mH, IAS=6A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
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HFP730F Даташит, Описание, Даташиты
Typical Characteristics
16
Notes :
VGS 1. 300us Pulse Test
Top :
15.0 V
10.0 V
2. TC = 25oC
8.0 V
12
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
8
4
0
0 10 20 30
V , Drain-Source Voltage [V]
DS
Figure 1. On Region Characteristics
4
Note : TJ = 25oC
3
2
VGS = 10V
1
VGS = 20V
0
0 4 8 12 16
ID, Drain Current[A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
1200
1000
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss ds gd
Crss = Cgd
800 Ciss
600
Coss
400 Notes :
1. V = 0 V
GS
2. f = 1 MHz
200 Crss
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10
25oC
1 150oC
-55oC
Notes :
1. VDS= 30V
2. 300us Pulse Test
0.1
2 3 4 5 6 7 8 9 10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10
25oC
150oC
1
0.1
0.2
Notes :
1. VGS= 0V
2. 300us Pulse Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain Voltage [V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V = 80V
DS
VDS = 200V
8 VDS = 320V
6
4
2
Note : ID = 6 A
0
0 3 6 9 12 15
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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