|
|
PDF HFA10N90Z Data sheet ( Hoja de datos )
| Número de pieza | HFA10N90Z | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | SemiHow | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de HFA10N90Z (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
Oct 2016
HFH10N90Z / HFA10N90Z
900V N-Channel MOSFET
Features
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
100% Avalanche Tested
RoHS Compliant
Built-in ESD Diode
Key Parameters
Parameter
BVDSS
ID
RDS(on), Typ
Qg, Typ
Value
900
10
1.0
72
HFH10N90Z
TO-3P
HFA10N90Z
TO-247
Symbol
Unit
V
A
ȍ
nC
S
D
G
S
D
G
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
TO-3P
TO-247
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
900
10 10 *
6.3 6.3 *
40 40 *
ρ30
950
9.0
29
4.0
PD
Power Dissipation (TC = 25)
- Derate above 25
290
2.32
115
0.92
VESD(G-S)
TJ, TSTG
TL
Gate source ESD(HBM-C=100pF, R=1.5K
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
4
-55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
TO-3P
0.43
0.24
40
TO-247
1.08
--
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
KV
Unit
/W
/W
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ΔΥΠΓΖΣ͑ͣͧ͑͢͡
1 page  
Typical Characteristics (continued)
D=0.5
10-1 0.2
0.1
0.05
10-2
0.02
0.01
10-5
* Notes :
1. ZTJC(t) = 0.43 oC/W Max.
2. Duty Factor, D=t /t
12
3. TJM - TC = PDM * ZTJC(t)
PDM
single pulse
t1
t2
10-4
10-3
10-2
10-1
100
t1, Square Wave Pulse Duration [sec]
101
Figure 11-1. Transient Thermal Response Curve for TO-3P
100
D=0.5
0.2
10-1
0.1
0.05
0.02
0.01
10-2
10-5
* Notes :
1. ZTJC(t) = 1.08 oC/W Max.
2. Duty Factor, D=t1/t2
3.
T
JM
-
T
C
=
P
DM
*
ZTJC(t)
PDM
single pulse
t1
t2
10-4
10-3
10-2
10-1
100
t1, Square Wave Pulse Duration [sec]
101
Figure 11-2. Transient Thermal Response Curve for TO-247
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ΔΥΠΓΖΣ͑ͣͧ͑͢͡
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HFA10N90Z.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HFA10N90Z | N-Channel MOSFET | SemiHow |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |