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PDF HCS65R160T Data sheet ( Hoja de datos )
| Número de pieza | HCS65R160T | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | SemiHow | |
| Logotipo |  |
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Jan 2016
HCS65R160T
650V N-Channel Super Junction MOSFET
Features
Very Low FOM (RDS(on) X Qg)
Extremely low switching loss
Excellent stability and uniformity
100% Avalanche Tested
Key Parameters
Parameter
BVDSS @Tj,max
ID
RDS(on), max
Qg, Typ
Value
700
20
0.16
41
Unit
V
A
ȍ
nC
Application
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
TV power & LED Lighting Power
Package & Internal Circuit
TO-220F
G
D
S
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
PD
TJ, TSTG
TL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Power Dissipation (TC = 25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
650
ρ30
20.0 *
12.6 *
60.0 *
640
34.5
-55 to +150
260
* Drain current limited by maximum junction temperature
Units
V
V
A
A
A
mJ
W
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
3.6
62.5
Units
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͡͝ͻΒΟ͑ͣͧ͑͢͡
1 page  
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
.ȍ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDD
( 0.5 rated VDS )
DUT
VDS
90%
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
VDD
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
ID (t)
DUT
VDD
VDS (t)
t p Time
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͡͝ͻΒΟ͑ͣͧ͑͢͡
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HCS65R160T.PDF ] | |
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