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PDF HCD80R650E Data sheet ( Hoja de datos )
| Número de pieza | HCD80R650E | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | SemiHow | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HCD80R650E (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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March 2017
HCD80R650E
800V N-Channel Super Junction MOSFET
Features
Very Low FOM (RDS(on) X Qg)
Extremely low switching loss
Excellent stability and uniformity
100% Avalanche Tested
Key Parameters
Parameter
BVDSS @Tj,max
ID
RDS(on), max
Qg, Typ
Value
850
8
0.65
12
Unit
V
A
Ω
nC
Application
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
Motor Control & LED Lighting Power
DC-DC Converters
Package & Internal Circuit
D-PAK
Absolute Maximum Ratings TJ=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
dv/dt
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
MOSFET dv/dt ruggedness, VDS=0…640V
Reverse diode dv/dt, VDS=0…640V, IDS≤ID
Power Dissipation (TC = 25℃)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
800
±30
8
5
24
240
50
15
83
-55 to +150
300
Units
V
V
A
A
A
mJ
V/ns
V/ns
W
℃
℃
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (minimum pad of 2 oz copper)
Junction-to-Ambient (* 1 in2 pad of 2 oz copper)
Typ.
--
--
--
Max.
1.5
110
50
Units
℃/W
◎ SEMIHOW REV.A1, March 2017
1 page  
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDD
( 0.5 rated VDS )
DUT
VDS
90%
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
VDD
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
ID (t)
DUT
VDD
VDS (t)
t p Time
◎ SEMIHOW REV.A1, March 2017
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HCD80R650E.PDF ] | |
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