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Número de pieza | HDAE30U60G | |
Descripción | Ultra Fast Recovery Diode | |
Fabricantes | SemiHow | |
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No Preview Available ! HDAE30U60G
Ultra Fast Recovery Diode
General Description
With excellent performance in reverse recovery time, switching speed and
rated current, HDAE30U60G can be utilized with high voltage power
switches for voltage limitation and high-frequency current rectification.
Features
Ultrafast Recovery Time
Low Forward Voltage
Low Stored Charge
Mar 2016
VRRM = 600 V
IF = 30 A
trr(Typ) = 33 nS
TO-247-2L
C
A
Cathode
Anode
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VRRM
VR
IF(AV)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectifier Forward Current
IFSM Non-Rectifier Peak Surge Current @8.3ms
TJ, TSTG Operating and Storage Temperature Range
Value
600
30
300
-55 to +150
Electrical Characteristics
Symbol
VBR
VF
IR
Parameter
Breakdown Voltage
Forward Voltage
Reverse Current
trr Reverse Recovery Time
Test Conditions
IR = 50uA
IF = 30A, TC = 25℃
VR = 600V, TC = 25℃
IF = 1A, di/dt = 200A/μs
IF = 30A, di/dt = 200A/μs
Min
600
--
--
--
--
Typ
--
1.25
--
33
60
Max
--
1.5
10
--
--
Unit
V
A
A
℃
Unit
V
V
uA
ns
ns
Thermal Resistance Characteristics
Symbol
Parameter
RθJC
Junction-to-Case
Typ.
--
Max.
1.0
Unit
℃/W
◎ SEMIHOW REV.A0,.Mar 2016
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet HDAE30U60G.PDF ] |
Número de pieza | Descripción | Fabricantes |
HDAE30U60G | Ultra Fast Recovery Diode | SemiHow |
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