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CAT660EPA PDF даташит

Спецификация CAT660EPA изготовлена ​​​​«Catalyst Semiconductor» и имеет функцию, называемую «100mA CMOS Charge Pump Inverter/Doubler».

Детали детали

Номер произв CAT660EPA
Описание 100mA CMOS Charge Pump Inverter/Doubler
Производители Catalyst Semiconductor
логотип Catalyst Semiconductor логотип 

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CAT660EPA Даташит, Описание, Даташиты
Preliminary Information
CAT660
100mA CMOS Charge Pump Inverter/Doubler
FEATURES
ALOGEN FR
LEA D F REETM
I Replaces MAX660 and LTC®660
I Converts V+ to V- or V+ to 2V+
I Low output resistance, 4typical
I High power efficiency
I Selectable charge pump frequency
- 10kHz or 80kHz
- Optimize capacitor size
I Low quiescent current
I Pin-compatible, high-current alternative to
7660/1044
I Industrial temperature range
I Available in 8-pin SOIC, DIP and 0.8mm thin 8-
pad TDFN packages
- Lead-free, halogen-free package option
APPLICATIONS
I Negative voltage generator
I Voltage doubler
I Voltage splitter
I Low EMI power source
I GaAs FET biasing
I Lithium battery power supply
I Instrumentation
I LCD contrast bias
I Cellular phones, pagers
DESCRIPTION
The CAT660 is a charge-pump voltage converter. It will
invert a 1.5V to 5.5V input to a -1.5V to -5.5V output. Only
two external capacitors are needed. With a guaranteed
100mA output current capability, the CAT660 can replace
a switching regulator and its inductor. Lower EMI is
achieved due to the absence of an inductor.
In addition, the CAT660 can double a voltage supplied
from a battery or power supply. Inputs from 2.5V to 5.5V
will yield a doubled, 5V to 11V output voltage.
A Frequency Control pin (BOOST/FC) is provided to
select either a high (80kHz) or low (10kHz) internal
oscillator frequency, thus allowing quiescent current vs.
capacitor size trade-offs to be made. The 80kHz
frequency is selected when the FC pin is connected to
V+. The operating frequency can also be adjusted with
an external capacitor at the OSC pin or by driving OSC
with an external clock.
Both 8-pin DIP and SOIC packages are available in the
industrial temperature range. The TDFN package has a
4x4mm footprint and features a 0.8mm maximum height.
Compared to the 8-pin SOIC the TDFN package footprint
is nearly 50% less. For die availability, contact Catalyst
Semiconductor marketing.
The CAT660 replaces the MAX660 and the LTC660.
In addition, the CAT660 is pin compatible with the 7660/
1044, offering an easy upgrade for applications with
100mA loads.
TYPICAL APPLICATION
+VIN
1.5V to 5.5V
C1
+
1 BOOST/FC
V+ 8
2 CAP+
CAT660
3 GND
OSC 7
LV 6
4 CAP-
OUT 5
VOLTAGE INVERTER
Inverted
Negative
Output
Voltage
C1 +
VIN = 2.5V to 5.5V
1 BOOST/FC
V+ 8
2 CAP+
OSC 7
CAT660
3 GND
LV 6
4 CAP-
OUT 5
POSITIVE
VOLTAGE DOUBLER
Doubled
Positive
Output
Voltage
© 2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
1
Doc. No. 5000, Rev. U









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CAT660EPA Даташит, Описание, Даташиты
CAT660
PIN CONFIGURATION
SOIC Package (S, X)
DIP Package (P)
TDFN Package (RD8, ZD8)
BOOST/FC 1
CAP+ 2
GND 3
CAP- 4
CAT
660
8 V+
7 OSC
6 LV
5 OUT
BOOST/FC 1
CAP+ 2
GND 3
CAP- 4
CAT
660
8 V+ BOOST/FC 1
7 OSC
CAP+ 2
6 LV
GND 3
5 OUT
CAP- 4
CAT
660
8 V+
7 OSC
6 LV
5 OUT
(Top View)
PIN DESCRIPTIONS
(Top View)
(Top View)
TDFN Package: 4mm x 4mm
0.8mm maximum height
Circuit Configuration
Pin Number Name
1 Boost/FC
Inverter Mode
Frequency Control for the internal oscilla-
tor. With an external oscillator BOOST/FC
has no effect.
Boost/FC Oscillator Frequency
Doubler Mode
Same as inverter.
Oscillator Frequency
Open
10kHz typical, 5kHz minimum 10kHz typical
V+ 80kHz typical, 40kHz minimum 80kHz typical, 40kHz minimum
2 CAP+ Charge pump capacitor. Positive terminal. Same as inverter.
3 GND Power supply ground.
Power supply. Positive voltage input.
4 CAP- Charge pump capacitor. Negative terminal. Same as inverter.
5 OUT Output for negative voltage.
Power supply ground.
6 LV Low-Voltage selection pin. When the input LV must be tied to OUT for all input
voltage is less than 3V, connect LV to GND. voltages.
For input voltages above 3V, LV may be
connected to GND or left open. If OSC is
driven externally, connect LV to GND.
7 OSC Oscillator control input. An external capacitor Same as inverter. Do not overdrive
can be connected to lower the oscillator OSC in doubling mode. Standard logic
frequency. An external oscillator can drive levels will not be suitable. See the
OSC and set the chip operating frequency. applications section for additional
The charge-pump frequency is one-half the information.
frequency at OSC.
8
V+ Power supply. Positive voltage input.
Positive voltage output.
ORDERING INFORMATION
Part Number
CAT660EPA
CAT660ESA
CAT660ESA-TE13
CAT660ERD8
CAT660EVA
CAT660EVA-TE13
CAT660EZD8
Package
8 lead Plastic DIP
8-lead SOIC
8-lead SOIC, Tape & Reel
8-pad TDFN
8-lead SOIC (Lead-free, Halogen-free)
8-lead SOIC (Lead-free, Halogen-free)
8-pad TDFN (Lead-free, Halogen-free)
Temperature Range
-40°C to 85°C
-40°C to 85°C
-40°C to 85°C
-40°C to 85°C
-40°C to 85°C
-40°C to 85°C
-40°C to 85°C
Doc. No. 5000, Rev. U
2









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CAT660EPA Даташит, Описание, Даташиты
CAT660
ABSOLUTE MAXIMUM RATINGS
V+ to GND ............................................................. 6V
Input Voltage (Pins 1, 6 and 7) .. -0.3V to (V+ + 0.3V)
BOOST/FC and OSC Input Voltage ........... The least
negative of (Out - 0.3V) or (V+ - 6V) to (V+ + 0.3V)
Output Short-circuit Duration to GND .............. 1 sec.
(OUT may be shorted to GND for 1 sec without damage but
shorting OUT to V+ should be avoided.)
Continuous Power Dissipation (TA = 70°C)
Plastic DIP ................................................ 730mW
SOIC ......................................................... 500mW
TDFN ............................................................... 1W
Storage Temperature ......................... -65°C to 160°C
Lead Soldering Temperature (10 sec) ............. 300°C
Note: TA = Ambient Temperature
These are stress ratings only and functional operation is not
implied. Exposure to absolute maximum ratings for prolongued
time periods may affect device reliability. All voltages are with
respect to ground.
Operating Ambient Temperature Range
CAT660E .............. -40°C to 85°C
ELECTRICAL CHARACTERISTICS
V+ = 5V, C1 = C2 = 150µF, Boost/FC = Open, COSC = 0pF, inverter mode with test circuit as shown in Figure 1 unless
otherwise noted. Temperature is over operating ambient temperature range unless otherwise noted.
Parameter
Supply Voltage
Supply Current
Symbol
VS
IS
Conditions
Inverter: LV = Open. RL = 1k
Inverter: LV = GND. RL = 1k
Doubler: LV = OUT. RL = 1k
BOOST/FC = open, LV = Open
BOOST/FC = V+ , LV = Open
Min Typ Max Units
3.0 5.5 V
1.5 5.5
2.5 5.5
0.09 0.5 mA
0.3 3
Output Current
Output Resistance
IOUT
RO
Oscillator Frequency FOSC
(Note 3)
OSC Input Current IOSC
Power Efficiency
PE
Voltage Conversion VEFF
Efficiency
OUT is more negative than -4V
100
mA
IL = 100mA, C1 = C2 = 150 µF (Note 2)
BOOST/FC = V+ (C1, C2 ESR 0.5)
47
IL = 100mA, C1 = C2 = 10 µF
12
BOOST/FC = Open
5 10
kHz
BOOST/FC = V+
40 80
BOOST/FC = Open
BOOST/FC = V+
±1 µA
±5
RL = 1kconnected between V+ and
OUT, TA = 25°C (Doubler)
RL = 500connected between GND and
OUT, TA = 25°C (Inverter)
IL = 100mA to GND, TA = 25°C (Inverter)
No load, TA = 25°C
96 98
92 96
88
99 99.9
%
%
Note 1. In Figure 1, test circuit capacitors C1 and C2 are 150µF and have 0.2maximum ESR. Higher ESR levels may reduce efficiency and output
voltage.
Note 2. The output resistance is a combination of the internal switch resistance and the external capacitor ESR. For maximum voltage and efficiency
keep external capacitor ESR under 0.2.
Note 3. FOSC is tested with COSC = 100pF to minimize test fixture loading. The test is correlated back to COSC=0pF to simulate the capacitance
at OSC when the device is inserted into a test socket without an external COSC.
3 Doc. No. 5000, Rev. U










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