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PDF CBSL1 Data sheet ( Hoja de datos )
| Número de pieza | CBSL1 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
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CBSL1
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CBSL1 is Designed for UHF
Class A Amplifier Applications in
Cellular Base Station Equipment.
FEATURES:
• Pg = 10 dB min. @ 960 MHz
• P1dB = 1.0 Watts min. at 960 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 0.25 A
VCBO
40 V
VCEO
28 V
VEBO
PDISS
TJ
TSTG
θJC
3.5 V
7.0 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
25 OC/W
PACKAGE STYLE .280 4L STUD
A
45°
C
BE
E
B
D
E
F
C
J
I
G
H
K
#8-32 UNC
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A 1.010 / 25.65
1.055 / 26.80
B .220 / 5.59
.230 /5.84
C .270 / 6.86
.285 / 7.24
D .003 / 0.08
.007 / 0.18
E .117 / 2.97
.137 / 3.48
F .572 / 14.53
G .130 / 3.30
H .245 / 6.22
.255 / 6.48
I .640 / 16.26
J .175 / 4.45
.217 / 5.51
K .275 / 6.99
.285 / 7.24
ORDER CODE: ASI10577
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 1 mA
BVCEO
IC = 1 mA
BVEBO
IE = 1 mA
ICBO
VCB = 24 V
hFE VCE = 5.0 V
IC = 100 mA
MINIMUM TYPICAL MAXIMUM
40
25
3.5
500
20 120
UNITS
V
V
V
µA
---
COB VCB = 28 V
f = 1.0 MHz
5.0 pF
PG
P1dB
VCC = 24 V
ICQ = 125 mA
f = 960 MHz
10
1.0
dB
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet CBSL1.PDF ] | |
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