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PDF CBSL30B Data sheet ( Hoja de datos )
| Número de pieza | CBSL30B | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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CBSL30B
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CBSL30B is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 5.0 A
VCBO
48 V
VCES
45 V
VEBO
PDISS
TJ
TSTG
θJC
4.0 V
43 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
3.0 OC/W
PACKAGE STYLE .250 BAL FLG
A
B
.020 x 45°
Ø.130 NOM.
.050 x 45°
EC
D
N
F
J
G
H
I
LM
K
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
MINIMUM
inches / mm
.055 / 1.40
.243 / 6.17
.630 / 16.00
.555 / 14.10
.739 / 18.77
.315 / 8.00
.002 / 0.05
.055 / 1.40
.075 1.91
.245 / 6.22
.060 / 1.52
.125 / 3.18
.092 / 2.34
MAXIMUM
inches / mm
.065 / 1.65
.255 / 6.48
.670 / 17.01
.565 / 14.35
.750 / 19.05
.327 / 8.31
.006 / 0.15
.065 / 1.65
.095 / 2.41
.190 / 4.83
.257 / 6.53
ORDER CODE: ASI10583
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 50 mA
BVCEO
IC = 20 mA
BVEBO
IE = 5 mA
ICBO
VCB = 24 V
hFE VCE = 5.0 V
IC = 100 mA
MINIMUM TYPICAL MAXIMUM
48 50 ---
25 30 ---
3.5 4.0
---
1.0
20 100
UNITS
V
V
V
mA
---
COB VCB = 24 V
f = 1.0 MHz
25 pF
PG
VCC = 24 V
POUT = 30 W
ICQ = 2 X 75 mA f = 960 MHz
7.5
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet CBSL30B.PDF ] | |
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