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PDF CBSL60B Data sheet ( Hoja de datos )
| Número de pieza | CBSL60B | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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CBSL60B
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CBSL60B is Designed for
FEATURES:
• Input Matching Network
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 8.0 A
VCBO
60 V
VCEO
28 V
VEBO
PDISS
TJ
TSTG
θJC
3.5 V
146 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
1.2 OC/W
PACKAGE STYLE .450 BAL FLG (A)
.060x45°
C
E
D
F
B
A
FULL R
.100x45°
P
G
H
J
K
N
M
L
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A .055 / 1.40
B .120 / 3.05
.130 / 3.30
C .785 / 19.94
D .455 / 11.56
.465 / 11.81
E .120 / 3.05
.130 / 3.30
F .230 / 5.84
G .838 / 21.28
.850 / 21.59
H 1.095 / 27.81
1.105 / 28.07
J .525 / 13.34
.535 / 13.59
K .002 / 0.05
.005 / 0.15
L .055 / 1.40
.065 / 1.65
M .080 . 2.03
.095 / 2.41
N .195 / 4.95
P .445 / 11.30
.455 / 11.56
ORDER CODE: ASI10584
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 100 mA
BVCEO
IC = 100 mA
BVEBO
IE = 20 mA
ICEO
VCE = 25 V
hFE VCE = 5.0 V
IC =3.0 A
MINIMUM TYPICAL MAXIMUM
60
28
3.5
30
25 80
UNITS
V
V
V
mA
---
PG
VSRW
VCC = 26 V
POUT = 60 W
VCC = 26 V
ICQ = 2 X 200 mA
f = 960 MHz
f = 960 MHz
8.5
5:1
dB
---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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