|
|
PDF NGTB30N135IHRWG Data sheet ( Hoja de datos )
| Número de pieza | NGTB30N135IHRWG | |
| Descripción | IGBT | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NGTB30N135IHRWG (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
NGTB30N135IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, provides superior
performance in demanding switching applications, and offers low
on−state voltage with minimal switching losses. The IGBT is well
suited for resonant or soft switching applications.
Features
• Extremely Efficient Trench with Fieldstop Technology
• 1350 V Breakdown Voltage
• Optimized for Low Losses in IH Cooker Application
• Reliable and Cost Effective Single Die Solution
• These are Pb−Free Devices
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage @
TJ = 25°C
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current, Tpulse
limited by TJmax 10 ms pulse,
VGE = 15 V
Diode forward current
@ TC = 25°C
@ TC = 100°C
Diode pulsed current, Tpulse limited
by TJmax 10 ms pulse,
VGE = 0 V
Gate−emitter voltage
Transient Gate−emitter Voltage
(Tpulse = 5 ms, D < 0.10)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
Operating junction temperature
range
VCES
IC
ICM
1350
60
30
120
V
A
A
IF A
60
30
IFM 120 A
VGE
$20
V
±25
PD W
394
197
TJ −40 to +175 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +175
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
30 A, 1350 V
VCEsat = 2.30 V
Eoff = 0.85 mJ
C
G
E
G
C
E
TO−247
CASE 340AL
MARKING DIAGRAM
30N135IHR
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
NGTB30N135IHRWG TO−247
(Pb−Free)
Shipping
30 Units / Rail
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 0
1
Publication Order Number:
NGTB30N135IHR/D
1 page  
NGTB30N135IHRWG
TYPICAL CHARACTERISTICS
3
2.5
2
1.5
1
0.5
0
5
2.5
10000
Eoff
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 30 A
15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
1000
td(off)
tf
100
VCE = 600 V
VGE = 15 V
TJ = 150°C
10 IC = 30 A
5 15 25 35 45 55 65 75
Rg, GATE RESISTOR (W)
Figure 14. Switching Time vs. Rg
85
1000
2 Eoff
1.5
1
IC = 30 A
0.5
VGE = 15 V
TJ = 150°C
Rg = 10 W
0
250 300 350 400 450 500 550 600 650 700 750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
td(off)
tf
100
IC = 30 A
VGE = 15 V
TJ = 150°C
Rg = 10 W
10
250 300 350 400 450 500 550 600 650 700 750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Switching Time vs. VCE
1000
100
10
dc operation
1 ms 100 ms
50 ms
1000
VGE = 15 V, TC = 125°C
100
1
Single Nonrepetitive
Pulse TC = 25°C
0.1 Curves must be derated
linearly with increase
0.01 in temperature
1 10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
10
1 1 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 18. Reverse Bias Safe Operating Area
http://onsemi.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NGTB30N135IHRWG.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NGTB30N135IHRWG | IGBT | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |