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PDF WNM12N65 Data sheet ( Hoja de datos )
| Número de pieza | WNM12N65 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Will Semiconductor | |
| Logotipo |  |
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WNM12N65/WNM12N65F
650V N-Channel MOSFET
Description
The WNM12N65/WNM12N65F is N-Channel
enhancement MOS Field Effect Transistor. Uses
advanced high voltage MOSFET Process and
design to provide excellent RDS (ON) with low gate
charge. This device is suitable for use in popular
AC-DC applications, power switching application
and a wide variety of other applications.
WNM12N65/WNM12N65F
Features
650V@TJ=25°C
Typ.RDS(on)=0.57Ω
Low gate charge
100% avalanche tested
100% Rg tested
D
GDS
TOT-O22- 0
12N65
12N65F
G
S
GD S
TO-220F
WNM12N65 =Devices code
Y Y =Year
WW =Week
WNM12N65 F =Devices code
Y Y =Year
WW =Week
Order Information
Device
Package
WNM12N65_3/T
TO-220
WNM12N65F_3/T TO-220-F
Units/Tube
50
50
Absolution Maximum Ratings TA=25oC unless otherwise noted
Parameter
Symbol WNM12N65
WNM12N65F
Drain-Source Voltage
Gate-Source Voltage
TC=25°C
Continuous Drain Current
TC=100°C
Pulsed Drain Current
Single Pulsed Avalanche Energy C
VDS 650
VGS ±30
12
ID
7.5
650
±30
12*
7.5*
IDM 48
EAS 165
Peak diode recovery dv/dt
dv/dt
5
Power Dissipation B
TC=25°C
192
PD
Derate above 25°C
1.53
39
0.31
Operating and Storage Temperature Range
TJ,TSTG
-55~150
Lead Temperature
Thermal Resistance Ratings
Maximum Junction-to-Ambient A
Maximum Case to Sink
Maximum Junction-to-Case
TL
RθJA
RθCS
RθJC
260
65 65
0.5
0.65 3.2
*Drain current limited by maximum junction temperature.
Unit
V
A
A
mJ
V/ns
W
W/°C
°C
°C
°C/W
Will Semiconductor Ltd. 1 Dec, 2013 - Rev.1.0
1 page  
WNM12N65/WNM12N65F
10
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
1 RθJC=0.65°C/W
0.1
0.01
0.001
0.00001
Single Pulse
0.0001
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
Ton
T
0.01 0.1
Pulse Width (s)
1
10 100
Transient thermal response (Junction-to-Case WNM12N65)
10
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
1 RθJC=3.2°C/W
0.1
0.01
0.001
0.00001
Single Pulse
0.0001
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.01 0.1
Pulse Width (s)
PD
Ton
T
1
10
100
Transient thermal response (Junction-to-Case WNM12N65F)
Will Semiconductor Ltd. 5 Dec, 2013 - Rev.1.0
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet WNM12N65.PDF ] | |
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