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Número de pieza | WNM2029 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Will Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de WNM2029 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! WNM2029
Single N-Channel, 20V, 1.85A, Power MOSFET
VDS (V)
20
Rds(on) (ȍ)
0.072@ VGS=4.5V
0.088@ VGS=2.5V
0.115@ VGS=1.8V
ID (A)
1.8
1.5
1.0
WNM2029
Http//:www.willsemi.com
Descriptions
The WNM2029 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNM2029 is Pb-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-323
Applications
SOT-323
D
3
12
GS
Pin configuration (Top view)
3
29*
12
29 = Device Code
* = Month (A~Z)
Marking
Order information
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Device
WNM2029-3/TR
Package
SOT-323
Shipping
3000/Reel&Tape
Will Semiconductor Ltd. 1 Jan, 2011 - Rev.1.0
1 page 280
240
200
160
120
80
40
0
0
20
V =0V
GS
F=1MHz
Ciss
Coss
Crss
2468
V Drain-to-Source Voltage (V)
DS
Capacitance
10
16
12
TA = 25_C
8
4
0
10–3
10–2
10–1
1
Time (sec)
10
Single pulse power
100 600
WNM2029
1.5
1.2
0.9 T=150oC
0.6
T=25oC
0.3
0.3 0.4 0.5 0.6 0.7 0.8 0.9
V -Source-to-Drain Voltage(V)
SD
Body diode forward voltage
10
1 ms
1 10 ms
*Limited by rDS(on)
0.1
100 ms
1s
10 s
0.01
TA = 25_C
Single Pulse
dc
0.001
0.1
BVDSS Limited
1 10 100
VDS – Drain-to-Source Voltage (V)
Safe operating power
1000
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10–4
Single Pulse
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 415_C/W
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd. 5 Jan, 2011 - Rev.1.0
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet WNM2029.PDF ] |
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