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WNM2046 PDF даташит

Спецификация WNM2046 изготовлена ​​​​«Will Semiconductor» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв WNM2046
Описание N-Channel MOSFET
Производители Will Semiconductor
логотип Will Semiconductor логотип 

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WNM2046 Даташит, Описание, Даташиты
WNM2046
Single N-Channel, 20V, 0.71A, Power MOSFET
VDS (V)
20
Typical Rds(on) (Ω)
0.220@ VGS=4.5V
0.260@ VGS=2.5V
0.315@ VGS=1.8V
WNM2046
Http://www.sh-willsemi.com
G
S
D
Descriptions
DFN1006-3L
The WNM2046 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNM2046 is Pb-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package DFN1006-3L
Applications
D
GS
Pin configuration (Top view)
6 = Device Code
* = Month (A~Z)
Marking
Small Signal Switching
Small Moto Driver
Order information
Device
WNM2046-3/TR
Package
DFN1006-3L
Shipping
10K/Reel&Tape
Will Semiconductor Ltd.
1
Aug, 2014- Rev.1.2









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WNM2046 Даташит, Описание, Даташиты
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a d
Maximum Power Dissipation a d
Continuous Drain Current b d
Maximum Power Dissipation b d
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WNM2046
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
20
±5
0.71 0.66
0.57 0.52
0.32 0.27
0.20 0.17
0.67 0.62
0.54 0.50
0.28 0.24
0.18 0.15
1.4
150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a t ≤ 10 s
Steady State
Junction-to-Ambient Thermal Resistance b t ≤ 10 s
Steady State
Junction-to-Case Thermal Resistance
Steady State
Symbol
RθJA
RθJA
RθJC
Typical
350
395
397
445
240
Maximum
390
455
435
505
280
Unit
°C/W
a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR4 board using minimum pad size, 1oz copper
c Pulse width<380μs, Single pulse
d Maximum junction temperature TJ=150°C.
e Pulse test: Pulse width <380 us duty cycle <2%.
Will Semiconductor Ltd. 2 Aug, 2014 - Rev.1.2









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WNM2046 Даташит, Описание, Даташиты
Electronics Characteristics (Ta=25oC, unless otherwise noted)
WNM2046
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BVDSS
IDSS
IGSS
VGS = 0 V, ID = 250uA
VDS =16 V, VGS = 0V
VDS = 0 V, VGS =±5V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250uA
Drain-to-source On-resistance e
RDS(on)
VGS = 4.5V, ID = 0.55A
VGS = 2.5V, ID = 0.45A
VGS = 1.8V, ID = 0.35A
Forward Transconductance
gFS VDS = 5 V, ID = 0.55A
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 100 KHz, VDS =
10 V
VGS = 4.5 V, VDS = 10 V,
ID = 0.55A
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(ON)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(OFF)
tf
VGS = 4.5 V, VDS = 10V,
ID =0.55A, RG=6 Ω
BODY DIODE CHARACTERISTICS
Forward Voltage
VSD VGS = 0 V, IS = 0.35A
Min
20
0.45
0.5
Typ
0.58
220
260
315
2.0
50.6
13.2
8.3
0.87
0.06
0.15
0.27
34
97.6
606
318
0.7
Max Unit
V
1 uA
±5 uA
0.85 V
420
500 mΩ
600
S
pF
nC
ns
1.1 V
Will Semiconductor Ltd. 3 Aug, 2014 - Rev.1.2










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