WNM3003 PDF даташит
Спецификация WNM3003 изготовлена «Will Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
Номер произв | WNM3003 |
Описание | N-Channel MOSFET |
Производители | Will Semiconductor |
логотип |
7 Pages
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WNM3003
N-Channel, 30V, 4.0A, Power MOSFET
WNM3003
Http://www.willsemi.com
V(BR)DSS
30V
Rds(on)
()
0.033@ 10V
0.033@ 10V
0.043 @ 4.5V
Descriptions
The WNM3003 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench technology
and design to provide excellent RDS (ON) with low gate
charge. This device is suitable for use in DC-DC
conversion and power switch applications. Standard
Product WNM3003 is Pb-free.
Features
SOT-23
D
3
12
GS
Configuration (Top View)
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23
WT3*
WT3
*
= Device Code
= Month (A~Z)
Marking
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Order Information
Device
Package
WNM3003-3/TR SOT-23
Shipping
3000/Tape&Reel
Will Semiconductor Ltd.
1 Dec,2011 - Rev.1.1
No Preview Available ! |
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Maximum Power Dissipation a
Continuous Drain Current b
Maximum Power Dissipation b
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WNM3003
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
30
±20
4.0 3.7
3.2 3.0
0.8 0.7
0.5 0.4
3.7 3.4
2.9 2.7
0.7 0.6
0.4 0.3
10
150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a t 10 s
Steady State
Junction-to-Ambient Thermal Resistance b t 10 s
Steady State
Junction-to-Case Thermal Resistance
Steady State
Symbol
RșJA
RșJA
RșJC
Typical
120
132
145
158
60
Maximum
145
168
174
202
75
Unit
°C/W
a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR4 board using minimum pad size, 1oz copper
c Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
d Repetitive rating, pulse width limited by junction temperature TJ=150°C.
Will Semiconductor Ltd.
2 Dec,2011 - Rev.1.1
No Preview Available ! |
Electronics Characteristics (Ta=25oC, unless otherwise noted)
WNM3003
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
IGSS
VGS = 0 V, ID = 250uA
VDS =24 V, VGS = 0V
VDS = 0 V, VGS = ±20V
Gate Threshold Voltage
Drain-to-source On-resistance
VGS(TH)
RDS(on)
VGS = VDS, ID = 250uA
VGS = 10V, ID = 3.1A
VGS = 10V, ID = 2.5A
VGS = 4.5V, ID = 2.0A
Forward Transconductance
gFS VDS = 4.5V, ID = 2.8A
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 1.0 MHz, VDS =
15 V
VGS =10 V, VDS =15 V,
ID = 3.1A
Turn-On Delay Time
td(ON)
Rise Time
Turn-Off Delay Time
tr
td(OFF)
VGS = 10 V, VDS = 15 V,
ID=1A, RG=6
Fall Time
tf
BODY DIODE CHARACTERISTICS
Forward Voltage
VSD VGS = 0 V, IS = 1.5A
Min
30
1.0
0.50
Typ Max Unit
1
±100
V
uA
nA
1.6 3.0 V
33 47
33 47 m
43 59
5.8 S
570
72
64
11.6
0.8
1.25
3.0
pF
nC
5
3.3
ns
39
4.4
0.84 1.50 V
Will Semiconductor Ltd.
3 Dec,2011 - Rev.1.1
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