DataSheet26.com

WNM3008 PDF даташит

Спецификация WNM3008 изготовлена ​​​​«Will Semiconductor» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв WNM3008
Описание N-Channel MOSFET
Производители Will Semiconductor
логотип Will Semiconductor логотип 

7 Pages
scroll

No Preview Available !

WNM3008 Даташит, Описание, Даташиты
WNM3008
Single N-Channel, 30V, 3.1A, Power MOSFET
VDS (V)
30
Rds(on) (ȍ)
0.044@ VGS=10V
0.057@ VGS=4.5V
WNM3008
Http//:www.willsemi.com
Descriptions
The WNM3008 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM3008 is Pb-free.
Features
SOT-23
D
3
12
GS
Pin configuration (Top view)
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
W38*
W38
*
= Device Code
= Month
Marking
Order information
Device
Package
Shipping
WNM3008-3/TR SOT-23 3000/Reel&Tape
Will Semiconductor Ltd. 1 Feb, 2012 - Rev.1.2









No Preview Available !

WNM3008 Даташит, Описание, Даташиты
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Maximum Power Dissipation a
Continuous Drain Current b
Maximum Power Dissipation b
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WNM3008
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
30
f20
3.1 2.8
2.5 2.3
0.8 0.7
0.5 0.4
2.8 2.6
2.2 2.1
0.6 0.5
0.4 0.3
10
150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a t ” 10 s
Steady State
Junction-to-Ambient Thermal Resistance b t ” 10 s
Steady State
Junction-to-Case Thermal Resistance
Steady State
Symbol
RșJA
RșJA
RșJC
Typical
125
140
150
165
60
Maximum
150
175
180
210
76
Unit
°C/W
a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR-4 board using minimum pad size, 1oz copper
c Pulse width<380μs, Duty Cycle<2%
d Maximum junction temperature TJ=150°C.
Will Semiconductor Ltd. 2 Feb, 2012 - Rev.1.2









No Preview Available !

WNM3008 Даташит, Описание, Даташиты
Electronics Characteristics (Ta=25oC, unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
Drain-to-source On-resistance b, c
RDS(on)
Forward Tranconductance
CAPACITANCES, CHARGES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
Forward Voltage
gFS
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
td(ON)
tr
td(OFF)
tf
VSD
Test Conditions
VGS = 0 V, ID = 250uA
VDS = 24V, VGS = 0V
VDS = 0 V, VGS =±20V
VGS = VDS, ID = 250uA
VGS =10V, ID = 3.1A
VGS =4.5V, ID =2.0A
VGS =2.5V, ID =1.0A
VDS=4.5V, ID=2.8A
VGS = 0 V,
f = 1.0 MHz,
VDS = 15 V
VGS = 10 V,
VDS = 15 V,
ID = 3.1A
VGS =10 V,
VDS = 15 V,
RL=15 Ÿ,
RG=6 Ÿ
VGS = 0 V, IS =1.5A
WNM3008
Min Typ Max Unit
30 V
1 uA
 ±100 nA
0.8 1.4 2.0 V
44 62
57 77 mŸ
180 235
5.0 s
265
38 pF
33
7.75
0.60
0.85
nC
1.80
5.1
2.9
20.6
2.7
ns
0.8 1.5 V
Will Semiconductor Ltd. 3 Feb, 2012 - Rev.1.2










Скачать PDF:

[ WNM3008.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
WNM3003N-Channel MOSFETWill Semiconductor
Will Semiconductor
WNM3003N-Channel MOSFETTY Semiconductor
TY Semiconductor
WNM3008N-Channel MOSFETWill Semiconductor
Will Semiconductor
WNM3008N-Channel MOSFETTY Semiconductor
TY Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск