WNM4002 PDF даташит
Спецификация WNM4002 изготовлена «Will Semiconductor» и имеет функцию, называемую «N-Channel MOSFET». |
|
Детали детали
Номер произв | WNM4002 |
Описание | N-Channel MOSFET |
Производители | Will Semiconductor |
логотип |
6 Pages
No Preview Available ! |
WNM4002
Small Signal N-Channel, 20V, 0.3A, MOSFET
V(BR)DSS
20 V
RDS(on) Typ.
1.4 @ 4.5V
2.2 @ 2.5V
3.8 @ 1.8V
Descriptions
The WNM4002 is the N-Channel enhancement
MOS Field Effect Transistor, uses advanced trench
technology and design to provide excellent RDS(ON) with
low gate charge. This device is suitable for use in
small signal switch. Standard product WNM4002 is
Pb-free.
Features
z Trench N-Channel
z Supper high density cell design for extremely low
Rds(on)
z Exceptional ON resistance and maximum DC
current capability
z Small package design with SOT-523
WNM4002
Http://www.willsemi.com
Top
D
3
12
GS
SOT-523
D
3
12
GS
Pin Configuration
3
N3 *
12
N3 = Device Code
* = Month
Marking
Applications
z Driver: Relays, Solenoids, Lamps, Hammers
z Power supply converters circuit
z Load/Power Switching for potable device
Order Information
Device
Package
WNM4002-3/TR SOT-523
Shipping
3000/Tape&Reel
Will Semiconductor Ltd. 1 Dec,2011 - Rev. 1.5
No Preview Available ! |
Absolute Maximum Ratings
(TA=25oC unless otherwise noted)
Symbol
VDSS
VGSS
ID
PD
TJ
TSG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current – Continue Note1
Drain Current – Pulsed (t<300us, Duty<2%) Note1
Power Dissipation – Note1
Operation junction temperature range
Storage temperature range
Thermal Resistance Ratings
(TA=25oC unless otherwise noted)
Symbol
RTJA
Parameter
Thermal Resistance, Junction to Ambient – Note1
Note1: Surface mounted on a 2 OZ copper, 1 in2 pad, FR-4 board.
WNM4002
Ratings
20
6.0
0.3
0.6
0.25
150
-55~150
Unit
V
V
A
A
W
OC
OC
Typ. Max.
500 620
Unit
OC/W
Will Semiconductor Ltd. 2 Dec,2011 - Rev. 1.5
No Preview Available ! |
Electronics Characteristics
(TA=25oC unless otherwise noted)
WNM4002
Symbol Parameter
Off Characteristics
V(BR)DSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate –Source leakage current
ON Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Drain-Source On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
QG(TOT)
Total Gate Charge
QGS Gate-Source Charge
QGD Gate-Drain Charge
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Drain-to-Source Diode Characteristics
VSD Forward Diode Voltage
Test Condition
Min
VGS=0V, ID=250uA
VDS=20V, VGS=0V
VDS=0V, VGS=5V
20
VDS= VGS, ID=250uA
VGS=4.5V, ID=0.3A
VGS=2.5V, ID=0.1A
VGS=1.8V, ID=0.01A
VDS=6V, ID=0.1A
0.35
VDS=6V,
VGS=0V,
F=100kHz
VDS=6V, VGS=4.5V,
ID=0.01A
VDS=10V, VGS=4.5V,
ID=0.1 A, RG=6
VGS=0V, IS=0.15A
Typ.
1.0
72
12
10
1.1
0.11
0.45
22
80
700
380
-0.7
Max
1
5
1.0
2.0
3.5
5.0
Unit
V
uA
uA
V
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
Will Semiconductor Ltd. 3 Dec,2011 - Rev. 1.5
Скачать PDF:
[ WNM4002.PDF Даташит ]
Номер в каталоге | Описание | Производители |
WNM4001 | Small Signal N-Channel MOSFET | Will Semiconductor |
WNM4002 | N-Channel MOSFET | Will Semiconductor |
WNM4006 | N-Channel MOSFET | Will Semiconductor |
WNM4006 | N-Channel MOSFET | TY Semiconductor |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |