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PDF WNM4006 Data sheet ( Hoja de datos )
| Número de pieza | WNM4006 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Will Semiconductor | |
| Logotipo |  |
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WNM4006
Single N-Channel, 45V, 1.7A, Power MOSFET
VDS (V)
45
Rds(on) (ȍ)
0.126@ VGS=10V
0.142@ VGS=4.5V
0.147@ VGS=4.0V
0.208@ VGS=2.5V
Descriptions
The WNM4006 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNM4006 is Pb-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23
WNM4006
Http//:www.willsemi.com
SOT-23
D
3
12
GS
Pin configuration (Top view)
W46*
W46
*
= Device Code
= Month (A~Z)
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Marking
Order information
Device
Package
Shipping
WNM4006-3/TR SOT-23 3000/Reel&Tape
Will Semiconductor Ltd. 1 Feb, 2012 - Rev.1.0
1 page  
500
F=1MHz
400
Ciss
300
200
100
Crss
0
05
Coss
10 15
20
V Drain-to-Source Voltage (V)
DS
Capacitance
25
10
8
6
TA = 25 °C
Single Pulse
4
2
0
0.01
0.1
1 10
Time (s)
100 600
Single pulse power
WNM4006
1.0
0.8
0.6
0.4
T=125OC
0.2
T=25OC
0.0
0.0
0.2 0.4 0.6 0.8
I -Source to Drain Current(A)
SD
1.0
Body diode forward voltage
10
Limited by RDS(on)
1
100 µs
1 ms
0.1
0.01
0.1
TA = 25 °C
Single Pulse
1
BVDSS Limited
10
VDS - Drain-to-Source Voltage (V)
10 ms
100 ms
1 s, 10 s
DC
100
Safe operating power
10
V =25V,I =2A
DS D
8
6
4
2
0
0246
Qg(nC)
8 10
Will Semiconductor Ltd.
Gate Charge Characteristics
5
Feb, 2012 - Rev.1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WNM4006.PDF ] | |
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