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PDF WNM4153 Data sheet ( Hoja de datos )
| Número de pieza | WNM4153 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Will Semiconductor | |
| Logotipo |  |
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WNM4153
N-Channel, 20V, 0.88A, Small Signal MOSFET
VDS (V)
20
RDS(on) (Ω)
0.220 @ VGS=4.5V
0.260 @ VGS=2.5V
0.320 @ VGS=1.8V
Descriptions
The WNM4153 is the N-Channel enhancement
MOS Field Effect Transistor, uses advanced trench
technology and design to provide excellent RDS(ON) with
low gate charge. This device is suitable for use in
DC-DC conversion applications. Standard Product
WNM4153 is Pb-free.
Features
Trench N-Channel
Supper high density cell design for extremely low
Rds(on)
Exceptional ON resistance and maximum DC
current capability
Small package design with SOT-523
WNM4153
Http://www.willsemi.com
Top
D
3
12
GS
SOT-523
D
3
12
GS
Pin Configuration
3
N3F
12
N3 = Device Code
F = Month
Marking
Applications
Driver: Relays, Solenoids, Lamps, Hammers
Power supply converters circuit
Load/Power Switching for potable device
Order Information
Device
Package
WNM4153-3/TR SOT-523
Shipping
3000/Tape&Reel
Will Semiconductor Ltd.
1 May, 2012 - Rev. 2.0
1 page  
WNM4153
60 0.8
VGS=0V
50 F=100kHz
0.6
40
Ciss
T=150oC
30
Coss
Crss
0.4
20
T=25oC
10 0.2
0
0 2 4 6 8 10
V Drain-to-Source Voltage (V)
DS
Capacitance
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
V -Source-to-Drain Voltage(V)
SD
Body Diode Characteristics
10
1
0.1 Limited by RDS(on)
0.01
10 ms
100 ms
1s
10 s
DC
0.001
TA = 25 °C
Single Pulse
0.1 1 10
VDS - Drain-to-Source Voltage (V)
100
Safe Operation Area, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Notes:
PDM
Single Pulse
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 340 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd. 5 May, 2012 - Rev. 2.0
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet WNM4153.PDF ] | |
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