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PDF WNMD2157 Data sheet ( Hoja de datos )

Número de pieza WNMD2157
Descripción Dual N-Channel MOSFET
Fabricantes Will Semiconductor 
Logotipo Will Semiconductor Logotipo



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WNMD2157
Dual N-Channel, 20V, 5.4A, Power MOSFET
VDS (V)
20
Rds(on) (ȍ)
0.019@ VGS=4.5V
0.024@ VGS=2.5V
0.034@ VGS=1.8V
WNMD2157
Http//:www.willsemi.com
Descriptions
Package
The WNMD2157 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2157 is Pb-free and
Halogen-free.
Features
G1 D1/D2
65
G2
4
1 23
S1 D1/D2 S2
Pin configuration (Top view)
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23-6L
Applications
6 54
2157
YYWW
1 23
2157
YY
WW
= Device Code
= Year
= Week
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
Marking
Order information
z Power Switch
z Load Switch
Device
Package
Shipping
WNMD2157-6/TR SOT-23-6L 3000/Reel&Tape
z Charging
Will Semiconductor Ltd. 1 Jan, 2015 - Rev.1.3

1 page




WNMD2157 pdf
2000
1600
1200
800
400
0
0
40
30
V =0V
GS
F=1MHz
Ciss
Coss
Crss
2468
V Drain-to-Source Voltage (V)
DS
Capacitance
10
TJ(Max)=150°C
TA=25°C
20
10
0
0.001 0.01
0.1 1 10
Pulse Width (s)
100 1000
Single pulse power
WNMD2157
1.5
1.2
0.9
T=150oC
0.6
0.3
T=25oC
0.3 0.4 0.5 0.6 0.7
V -Source-to-Drain Voltage(V)
SD
Body diode forward voltage
0.8
100
TJ(Max)=150°C, TA=25°C
RDS(ON)
limited
10
10Ps
100Ps
1
0.1
0.1
DC
10s
1 10
VDS (Volts)
1ms
10ms
100m
1s
100
Safe operating power
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10ï4
Single Pulse
10ï3
10ï2
10ï1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 132_C/W
3. TJM ï TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd. 5 Jan, 2015 - Rev.1.3

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