WNMD2160 PDF даташит
Спецификация WNMD2160 изготовлена «Will Semiconductor» и имеет функцию, называемую «Dual N-Channel MOSFET». |
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Детали детали
Номер произв | WNMD2160 |
Описание | Dual N-Channel MOSFET |
Производители | Will Semiconductor |
логотип |
7 Pages
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WNMD2160
Dual N-Channel, 20V, 6.3A, Power MOSFET
VDS (V)
Rds(on) (ȍ)
0.0157@ VGS=4.5V
0.018@ VGS=3.1V
20
0.020@ VGS=2.5V
ESD Rating: 2000V HBM
WNMD2160
Http//:www.willsemi.com
Descriptions
The WNMD2160 is N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2160 is Pb-free.
Features
SOT-23-6L
G1 D1/D2 G2
654
1 23
S1 D1/D2 S2
Pin configuration (Top view)
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23-6L
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
6 54
2160
YYWW
1 23
2160
YY
WW
= Device Code
= Year
= Week
Marking
Order information
Device
Package
Shipping
WNMD2160-6/TR SOT-23-6L 3000/Reel&Tape
Will Semiconductor Ltd. 1 Jan, 2015 - Rev.1.4
No Preview Available ! |
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Maximum Power Dissipation a
Continuous Drain Current b
Maximum Power Dissipation b
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WNMD2160
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
20
±10
6.3 5.7
5.0 4.6
1.1 0.9
0.7 0.6
5.8 5.2
4.6 4.1
0.9 0.7
0.6 0.5
30
150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Single Operation
Parameter
Symbol
Junction-to-Ambient Thermal Resistance a t 10 s
Steady State
RșJA
Junction-to-Ambient Thermal Resistance b t 10 s
Steady State
RșJA
Junction-to-Case Thermal Resistance
Steady State RșJC
Dual Operation
Junction-to-Ambient Thermal Resistance a t 10 s
Steady State
RșJA
Junction-to-Ambient Thermal Resistance b t 10 s
Steady State
RșJA
Junction-to-Case Thermal Resistance
Steady State RșJC
Typical
90
110
105
133
60
94
115
110
138
63
Maximum
108
130
128
158
75
112
132
132
162
78
Unit
°C/W
°C/W
a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR4 board using minimum pad size, 1oz copper
c Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
d Repetitive rating, pulse width limited by junction temperature TJ=150°C.
Will Semiconductor Ltd. 2 Jan, 2015 - Rev.1.4
No Preview Available ! |
Electronics Characteristics (Ta=25oC, unless otherwise noted)
WNMD2160
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BVDSS
IDSS
IGSS
VGS = 0 V, ID = 250uA
VDS =16 V, VGS = 0V
VDS = 0 V, VGS = ±10V
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-to-source On-resistance
VGS(TH)
RDS(on)
VGS = VDS, ID = 250uA
VGS = 4.5V, ID = 6.3A
VGS = 3.1V, ID = 6.0A
VGS = 2.5V, ID = 5.5A
Forward Transconductance
gFS VDS = 5.0 V, ID = 6.3A
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 1.Hz, VDS =
10 V
VGS = 4.5 V, VDS = 10 V,
ID = 6.3 A
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(ON)
Rise Time
Turn-Off Delay Time
tr
td(OFF)
VGS = 4.5 V, VDS =10 V,
RL=2.0 , RG=6
Fall Time
tf
BODY DIODE CHARACTERISTICS
Forward Voltage
VSD VGS = 0 V, IS = 1.0A
Min
20
0.5
11
12
14
Typ
0.7
15.7
18
20
16
800
108
93
10.9
0.62
1.92
2.0
410
1200
6100
3500
0.65
Max Unit
V
1 uA
±5 uA
1.0 V
21
23
m
26
S
pF
nC
ns
1.5 V
Will Semiconductor Ltd. 3 Jan, 2015 - Rev.1.4
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