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WNMD2162A PDF даташит

Спецификация WNMD2162A изготовлена ​​​​«Will Semiconductor» и имеет функцию, называемую «Dual N-Channel MOSFET».

Детали детали

Номер произв WNMD2162A
Описание Dual N-Channel MOSFET
Производители Will Semiconductor
логотип Will Semiconductor логотип 

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WNMD2162A Даташит, Описание, Даташиты
WNMD2162A
Dual N-Channel, 20V, 4.8A, Power MOSFET
VDS (V)
20
ESD Protected
Descriptions
Rds(on) (Ω)
0.014@ VGS=4.5V
0.015@ VGS=3.1V
0.016@ VGS=2.5V
The WNMD2162A is Dual N-Channel
enhancement MOS Field Effect Transistor. Uses
advanced trench technology and design to provide
excellent RDS (ON) with low gate charge. This device is
suitable for use in DC-DC conversion, power switch
and charging circuit. Standard Product WNMD2162A
is Pb-free and Halogen-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package PDFN2.9×2.8-8L
WNMD2162A
Http://www.sh-willsemi.com
PDFN2.9×2.8-8L
D2 D2 D1 D1
8 7 65
1 23 4
S2 G2 S1 G1
Pin configuration (Top view)
8 765
2162A
YYWW
1 2 34
2162A = Device Code
YY = Year
WW = Week
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Marking
Order information
Device
WNMD2162A-8/TR
Package
PDFN
2.9×2.8-8L
Shipping
3000/Reel&Tape
Will Semiconductor Ltd. 1 Jan, 2015 - Rev.1.1









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WNMD2162A Даташит, Описание, Даташиты
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a.e
Maximum Power Dissipation a.
Continuous Drain Current b.e
Maximum Power Dissipation b
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WNMD2162A
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
20
±10
4.8 4.5
4.8 3.6
1.7 0.9
1.1 0.6
4.8 4.1
4.7 3.3
1.6 0.8
1.0 0.5
40
-55~+150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Single Operation
Parameter
Junction-to-Ambient Thermal Resistance a t ≤ 10 s
Steady State
Junction-to-Ambient Thermal Resistance b t ≤ 10 s
Steady State
Symbol
RθJA
RθJA
Junction-to-Case Thermal Resistance
Steady State RθJC
Typical
61
102
65
120
54
Maximum
72
128
75
148
63
Unit
°C/W
a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper;.
b Surface mounted on FR-4 board using minimum pad size, 1oz copper;.
c Pulse width<380µs, Duty Cycle<2%;.
d Maximum junction temperature TJ=150°C;.
e Current rating is limited by wire-bonding.
Will Semiconductor Ltd. 2 Jan, 2015 - Rev.1.1









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WNMD2162A Даташит, Описание, Даташиты
Electronics Characteristics (Ta=25oC, unless otherwise noted)
WNMD2162A
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BVDSS
IDSS
IGSS
VGS = 0 V, ID = 250uA
VDS =16 V, VGS = 0V
VDS = 0 V, VGS = ±10V
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-to-source On-resistance
VGS(TH)
RDS(on)
VGS = VDS, ID = 250uA
VGS = 4.5V, ID = 4.8A
VGS = 3.1V, ID = 4.0A
VGS = 2.5V, ID = 3.0A
Forward Transconductance
gFS VDS = 5.0 V, ID = 4.8A
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 1.0 MHz, VDS =
10 V
VGS = 4.5 V, VDD = 10 V,
ID = 4.8 A
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(ON)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(OFF)
tf
VGS = 4.5 V, VDD = 6 V,
ID=4.8A, RG=6
BODY DIODE CHARACTERISTICS
Forward Voltage
VSD VGS = 0 V, IS = 1.0A
Min
20
0.4
10
11
12
Typ Max Unit
V
1 uA
±5 uA
0.7 1.0 V
14 22
15 28 mΩ
16 32
17 S
1371
185
172
18.9
1.3
2.8
6.4
pF
nC
29
35
ns
260
125
0.65 1.5 V
Will Semiconductor Ltd. 3 Jan, 2015 - Rev.1.1










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