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WNMD2165 PDF даташит

Спецификация WNMD2165 изготовлена ​​​​«Will Semiconductor» и имеет функцию, называемую «Dual N-Channel MOSFET».

Детали детали

Номер произв WNMD2165
Описание Dual N-Channel MOSFET
Производители Will Semiconductor
логотип Will Semiconductor логотип 

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WNMD2165 Даташит, Описание, Даташиты
WNMD2165
Dual N-Channel, 60V, 0.32A, Power MOSFET
VDS (V)
Rds(on) (Ω)
1.4@ VGS=10V
60
1.7@ VGS=4.5V
ESD Rating:2000V HBM
Descriptions
The WNMD2165 is Dual N-Channel enhancem
-ent MOS Field Effect Transistor. Uses advanced
trench technology and design to provide excellent
RDS (ON) with low gate charge. This device is suitable
for use in DC-DC conversion, power switch and
charging circuit. Standard Product WNMD2165 is
Pb-free and Halogen-free.
WNMD2165
Http//:www.sh-willsemi.com
SOT-363
D1 G2 S2
6 54
1 23
S1 G1 D2
Features
Pin configuration (Top view)
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package SOT-363
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
6 54
65*
1 23
65 = Device Code
* = Month (A~Z)
Marking
Order information
Device
Package
Shipping
WNMD2165-6/TR SOT-363 3000/Reel&Tape
Will Semiconductor Ltd. 1 Sep, 2013 - Rev.1.0









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WNMD2165 Даташит, Описание, Даташиты
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ad
Maximum Power Dissipation ad
Continuous Drain Current bd
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Maximum Power Dissipation bd
Pulsed Drain Current c
TA=25°C
TA=70°C
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
WNMD2165
10 s Steady State
60
±20
0.32 0.28
0.25 0.22
0.41 0.31
0.26 0.20
0.26 0.24
0.21 0.19
0.28 0.23
0.17 0.15
1.0
-55 to 150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a t ≤ 10 s
Steady State
Junction-to-Ambient Thermal Resistance b t ≤ 10 s
Steady State
Junction-to-Case Thermal Resistance Steady State
Symbol
RθJA
RθJA
RθJC
Typical
275
328
375
446
260
Maximum
305
395
445
532
300
Unit
°C/W
a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper.
b Surface mounted on FR-4 board using minimum pad size, 1oz copper.
c Pulse width<380µs.
d Maximum junction temperature TJ=150°C.
Will Semiconductor Ltd. 2 Sep, 2013 - Rev.1.0









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WNMD2165 Даташит, Описание, Даташиты
Electronics Characteristics (Ta=25oC, unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-to-source On-resistance b, c
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(on)
Forward Transconductance
CAPACITANCES, CHARGES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY DIODE CHARACTERISTICS
Forward Voltage
gFS
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
td(ON)
tr
td(OFF)
tf
VSD
Test Conditions
VGS = 0 V, ID = 250uA
VDS =60V, VGS = 0V
VDS = 0 V, VGS =±20V
VGS = VDS, ID = 250uA
VGS = 10V, ID = 0.32A
VGS = 4.5V, ID = 0.2A
VDS =15V, ID =0.25A
VGS = 0 V,
f = 1.0 MHz,
VDS = 25V
VGS = 10 V,
VDD = 30 V,
ID =0.37A
VDD=30V,RL=150
ID=0.2A,VGEN=10V,
RG=10
VGS = 0 V, IS =0.3A
WNMD2165
Min Typ Max Unit
60 V
1 uA
± 5 uA
0.8 1.3 2 V
1.4 2.0
1.7 2.6
0.42 S
23.37
7.33
5.2
1.2
0.15
0.21
0.12
pF
nC
7.6
5.1
ns
24.6
10
0.9 1.5 V
Will Semiconductor Ltd. 3 Sep, 2013 - Rev.1.0










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