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PDF WPM1488 Data sheet ( Hoja de datos )
| Número de pieza | WPM1488 | |
| Descripción | P-Channel MOSFET | |
| Fabricantes | Will Semiconductor | |
| Logotipo |  |
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WPM1488
Single P-Channel, -12V, -1.4A, Power MOSFET
VDS (V)
-12
Typical Rds(on) (Ω)
0.080@ VGS=–4.5V
0.086@ VGS=–3.6V
0.105@ VGS=–2.5V
ID (A)
-1.2
-1.0
-1.0
Descriptions
The WPM1488 is P-Channel enhancement
MOS Field Effect Transistor. Uses advanced
trench technology and design to provide excellent
RDS (ON) with low gate charge. This device is
suitable for use in DC-DC conversion, power
switch and charging circuit. Standard Product
WPM1488 is Pb-free.
WPM1488
www.sh-willsemi.com
SOT-323
Pin configuration (Top view)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC
current
Extremely Low Threshold Voltage
Small package SOT-323
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
14 = Specific Device Code
* = Date Code
Marking
Order information
Device
Package
Shipping
WPM1488-3/TR SOT-323 3000/Reel&Tape
Will Semiconductor Ltd.
1
May,2014 - Rev.1.0
1 page  
WPM1488
1000
800
600
400
V =0V
GS
F=1MHz
Ciss
Coss
Crss
5
4
3
2
T=25°C
T=125°C
200 1
0
0 2 4 6 8 10
-V - Drain-to-Source Voltage (V)
DS
Capacitance
20
TJ(Max)=150°C
15 TA=25°C
10
5
0
1E-4
1E-3
0.01 0.1
1
Pulse width (S)
10
100 1000
Single pulse power
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VSD- Source to Drain Voltage (V)
Body diode forward voltage
10
Limit by Rdson
1
100us
1ms
10ms
0.1
TA=25°C
Single Pulse
DC
100ms
1s
10s
0.01
0.1
Bvdss Limit
1 10
-V - Drain Source Voltage (V)
DS
Safe operating power
5
V =-10V
DD
4 ID=-1.2A
3
2
1
0
02468
Qg(nC)
Gate charge Characteristics
10
Will Semiconductor Ltd.
5
May,2014 - Rev.1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WPM1488.PDF ] | |
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