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WPM2065 PDF даташит

Спецификация WPM2065 изготовлена ​​​​«WillSEMI» и имеет функцию, называемую «MOSFET ( Transistor )».

Детали детали

Номер произв WPM2065
Описание MOSFET ( Transistor )
Производители WillSEMI
логотип WillSEMI логотип 

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WPM2065 Даташит, Описание, Даташиты
WPM2065
Single P-Channel, -20V, -6.9A, Power MOSFET
VDS (V) Typical Rds(on) ()
0.017@ VGS=-4.5V
-20 0.022@ VGS=-2.5V
0.032@ VGS=-1.8V
ESD Rating: 4000V HBM
Descriptions
The WPM2065 is P-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM2065 is Pb-free and
Halogen-free.
WPM2065
Http://www.sh-willsemi.com
DD G
DS
DD S
DFN2X2-6L
D1
D2
G3
6D
5D
4S
Pin configuration (Top view)
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
HBM ESD protection > 4kV
Small package DFN2X2-6L
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
2065
YY
WW
= Device Code
= Year
= Week
Marking
Order information
Device
Package
Shipping
WPM2065-6/TR DFN2X2-6L 3000/Reel&Tape
Will Semiconductor Ltd. 1 2014/9/1 – Rev. 1.2









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WPM2065 Даташит, Описание, Даташиты
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a d
Maximum Power Dissipation a d
Continuous Drain Current b d
Maximum Power Dissipation b d
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WPM2065
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
-20
±8
-6.9 -6.2
-5.5 -5.0
1.7 1.4
1.1 0.9
-5.5 -4.4
-4.4 -3.5
1.1 0.7
0.7 0.4
-28
-55 to 150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a
Junction-to-Ambient Thermal Resistance b
Junction-to-Case Thermal Resistance
t 10 s
Steady State
t 10 s
Steady State
Steady State
Symbol
RθJA
RθJA
RθJC
Typical
57
71
89
126
34
Maximum
72
90
115
181
44
Unit
°C/W
a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR-4 board using minimum pad size, 1oz copper
c Pulse width<380µs, Duty Cycle<2%
d Maximum junction temperature TJ=150°C.
Will Semiconductor Ltd. 2 2014/9/1 – Rev. 1.2









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WPM2065 Даташит, Описание, Даташиты
Electronics Characteristics (Ta=25oC, unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
Drain-to-source On-resistance b, c RDS(on)
Forward Trans conductance
gfs
CAPACITANCES, CHARGES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
BODY DIODE CHARACTERISTICS
Forward Voltage
VSD
Test Conditions
VGS = 0V, ID = -250uA
VDS = -16V, VGS = 0V
VDS = 0 V, VGS =±8V
VGS = VDS, ID = -250uA
VGS = -4.5V, ID = -6.9A
VGS = -2.5V, ID = -6.1A
VGS = -1.8V, ID = -5.3A
VDS = -5.0V, ID = -6.9A
VGS = 0 V,
f = 1.0 MHz,
VDS = -10 V
VGS = -4.5 V,
VDD = -10 V,
ID = -6.9 A
VGS = -4.5 V,
VDD = -10 V,
RL=3 ,
RG=6
VGS = 0 V, IS = -6.9A
WPM2065
Min Typ Max Unit
-20 V
-1 uA
±5 uA
-0.45
-0.65
17
22
32
50
-1.0
24
29
45
V
m
S
2026
225
201
23
2.5
4
6
pF
nC
40
76
284
ns
244
-0.8 -1.5 V
Will Semiconductor Ltd. 3 2014/9/1 – Rev. 1.2










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Номер в каталогеОписаниеПроизводители
WPM2065MOSFET ( Transistor )WillSEMI
WillSEMI

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