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WPMD2008 PDF даташит

Спецификация WPMD2008 изготовлена ​​​​«WillSEMI» и имеет функцию, называемую «MOSFET ( Transistor )».

Детали детали

Номер произв WPMD2008
Описание MOSFET ( Transistor )
Производители WillSEMI
логотип WillSEMI логотип 

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WPMD2008 Даташит, Описание, Даташиты
WPMD2008
Dual P-Channel, -20 V, - 4 .1A, Power MOSFET
Description
The WPMD2008 uses advanced trench technology and design to
provide excellent RDS(ON) with low gate charge. This device is suitable
for use in DC-DC conversion applications. Standard Product
WPMD2008 is Pb-free.
Features
9 %5 '66
í20 V
5'6 RQ 0$;
110m¡@ í4.5V
138m¡@ í2.5V
WPMD2008
Http://www.willsemi.com
z Lowest RDS(on) Solution in 2x2 mm Package
z 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive
Logic Level
z Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
z Bidirectional Current Flow with Common Source Configuration
z DFN6 Package Provides Exposed Drain Pad for Excellent
Thermal Conduction
Application
z Optimized for Battery and Load Management Applications in
Portable Equipment
z LiíIon Battery Charging and Protection Circuits
z High Power Management in Portable, Battery Powered Products
z High Side Load Switch
Order information
Part Number
WPMD2008-6/TR
Part Number
DFN 6
http://www.willsemi.com
Page 1
PIN CONNECTIONS
MARKING DIAGRAM
WLSI
EYWW
E = Specific Device Code
YWW = Date Code
Shipping
3000Tape&Reel
Dec,2011Ver1.2









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WPMD2008 Даташит, Описание, Даташиты
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter
VDS
VGS
ID
PD
ID
PD
IDM
TJ
Tstg
Symbol
Drain-Source voltage
Gate-Source Voltage
Continuous Steady-State
Drain
Steady-State
CurrentA t ” 5s
Steady-State
t ”ǂ5 s
Continuous Steady-State
Drain
CurrentB
Power Dissipation B
Pulse Drain Current B
TA=25ć
TA=85ć
TA=25ć
TA=25ć
TA=25ć
TA=85ć
TA=25ć
tp=10us
Operating Junction Temperature Range
Storage Temperature Range
Value
-20
±8
-3
-2.3
-4.1
1.45
2.3
-2.0
-1.5
0.7
-20
-55~150
Units
V
V
A
W
A
W
A
ć
A: Surface Mounted on FR4 Board using 1 in sq pad size, 2 oz Cu.
B: Surface Mounted on FR4 Board using the minimum pad size, 2oz Cu.
Thermal Resistance Ratings
Parameter
Junction to Ambient-Steady StateC
Junction to Ambient - t”5C
Junction to Ambient-Steady State Min PadD
Symbol
RșJA
RșJA
RșJA
C: Surface Mounted on FR4 Board using 1 in sq pad size, 2 oz Cu.
D: Surface Mounted on FR4 Board using the minimum pad size, 2oz Cu.
Max
86
54
175
WPMD2008
Unit
ć/W
ć/W
ć/W
http://www.willsemi.com
Page 2
Dec,2011Ver1.2









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WPMD2008 Даташит, Описание, Даташиты
WPMD2008
Electrical Characteristics
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25qC unless otherwise noted)
Parameter
OFF CHARACTERISTICS
DrainítoíSource
Voltage
Breakdown
Zero Gate Voltage Drain Current
Gateítoísource Leakage Current
ON CHARACTERISTICS
Symbol
BVDSS
IDSS
IGSS
Test Conditions
VGS = 0 V, ID = í250 uA
VDS = í16 V, VGS = 0 V
TJ = 25°C
TJ = 85°C
VDS = 0 V, VGS = ±8.0 V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = í250 uA
Drainítoísource Oníresistance
RDS(on)
VGS = í4.5V, ID = í2.0A
VGS = í2.5, ID = í 2.0A
Forward Transconductance gFS VDS = í10 V, ID = í2.7A
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
GateítoíSource Charge
QGS
GateítoíDrain Charge
QGD
Gate Resistance
RG
SWITCHING CHARACTERISTICS
VGS = 0 V, f = 1.0 MHz,VDS = í15 V
VGS = í4.5 V, VDS = í6 V, ID = í2.8 A
TurníOn Delay Time
td(ON)
Rise Time
TurníOff Delay Time
tr
td(OFF)
VGS = í4.5 V, VDs = í6.0 V, ID=-2.8A,
RG=6 Ÿ
Fall Time
tf
DRAINíSOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
VSD VGS = 0 V, IS = í1.0 A
TJ = 25°C
Min
í20
í0.4
Typ
í0.6
90
115
7.0
480
46
10
7.2
2.2
2.2
1.2
8.8
38
25
43
5
í0.7
Max Unit
í1
í10
±100
V
uA
nA
í1 V
110 mŸ
138
S
pF
nC
Ÿ
ns
V
http://www.willsemi.com
Page 3
Dec,2011Ver1.2










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WPMD2008MOSFET ( Transistor )WillSEMI
WillSEMI

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