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WPMD2012 PDF даташит

Спецификация WPMD2012 изготовлена ​​​​«WillSEMI» и имеет функцию, называемую «MOSFET ( Transistor )».

Детали детали

Номер произв WPMD2012
Описание MOSFET ( Transistor )
Производители WillSEMI
логотип WillSEMI логотип 

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WPMD2012 Даташит, Описание, Даташиты
WPMD2012
Dual P-Channel, -20V, -0.64A, Small Signal
MOSFET
VDS (V)
-20
Rds(on) (ȍ)
0.550@ VGS=-4.5V
0.740@ VGS=-2.5V
0.910@ VGS=-1.8V
Descriptions
The WPMD2012 is P-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, load switch and level shift.
Standard Product WPMD2012 is Pb-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance
z Extremely Low Threshold Voltage
z Small package SOT-363
WPMD2012
Http//:www.willsemi.com
SOT-363
D1 G2 S2
6 54
1 23
S1 G1 D2
Pin configuration (Top view)
6 54
12*
1 23
12 = Device Code
* = Month (A~Z)
Marking
Applications
z DC-DC converter circuit
z Small Signal Switch
z Load Switch
z Level Shift
Order information
Device
Package
Shipping
WPMD2012-6/TR SOT-363 3000/Reel&Tape
Will Semiconductor Ltd.
1 Dec,2011 - Rev.1.4









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WPMD2012 Даташит, Описание, Даташиты
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Maximum Power Dissipation a
Continuous Drain Current b
Maximum Power Dissipation b
Pulsed Drain Current c
Operating Junction Temperature
Storage Temperature Range
WPMD2012
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
Tstg
10 S Steady State
-20
f6
-0.64
-0.57
-0.51
-0.46
0.37 0.29
0.24 0.19
-0.55
-0.50
-0.44
-0.40
0.27 0.22
0.17 0.14
-1.0
150
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
Thermal resistance ratings
Single Operation
Parameter
Symbol
Junction-to-Ambient Thermal Resistance a t ” 10 s
Steady State
RșJA
Junction-to-Ambient Thermal Resistance b t ” 10 s
Steady State
RșJA
Junction-to-Case Thermal Resistance
Steady State RșJC
Dual Operation
Junction-to-Ambient Thermal Resistance a t ” 10 s
Steady State
RșJA
Junction-to-Ambient Thermal Resistance b t ” 10 s
Steady State
RșJA
Junction-to-Case Thermal Resistance
Steady State RșJC
Typical
280
340
380
460
280
315
371
425
492
285
Maximum
330
420
455
545
320
365
436
490
580
325
Unit
°C/W
°C/W
a. Surface mounted on FR4 Board using 1 in sq pad size, 1oz Cu.
b. Surface mounted on FR4 board using the minimum recommended pad size, 1oz Cu.
c. Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
d. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C
Will Semiconductor Ltd.
2 Dec,2011 - Rev.1.4









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WPMD2012 Даташит, Описание, Даташиты
Electronics Characteristics (Ta=25oC, unless otherwise noted)
WPMD2012
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
IGSS
VGS = 0 V, ID = 250uA
VDS =-16 V, VGS = 0V
VDS = 0 V, VGS =±5V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250uA
VGS = 4.5V, ID =0.5A
Drain-to-source On-resistance
RDS(on)
VGS = 2.5V, ID = A
VGS = 1.8V, ID = A
Forward Transconductance
gFS VDS = 5 V, ID = -0.45A
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 1.Hz, VDS =
10 V
VGS = 4.5 V, VDS = 10 V,
ID = -0.45A
Turn-On Delay Time
td(ON)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(OFF)
tf
VGS = -4.5 V, VDS = -10 V,
ID=-0.45A, RG=6 Ÿ
BODY DIODE CHARACTERISTICS
Forward Voltage
VSD VGS = 0 V, IS = -0.15A
Min
-20
-0.4
-0.50
Typ
-0.65
550
740
910
1.25
74.5
10.8
10.2
1.8
0.12
0.18
0.74
45
140
1500
2100
-0.65
Max Unit
V
-1 uA
-5 uA
-0.90
810
1050
1300
V
mŸ
S
pF
nC
ns
-1.50 V
Will Semiconductor Ltd.
3 Dec,2011 - Rev.1.4










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