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PDF WPMD3002 Data sheet ( Hoja de datos )
| Número de pieza | WPMD3002 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | WillSEMI | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de WPMD3002 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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WPMD3002
Dual P-Channel, -30V, -4.9A, Power MOSFET
VDS (V)
-30
Rds(on) (ȍ)
0.049@ VGS=-10V
0.070@ VGS=-4.5V
WPMD3002
Http//:www.willsemi.com
Descriptions
The WPMD3002 is the Dual P-Channel logic
mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high
density process is especially tailored to minimize
on-state resistance. These devices are particularly
suited for low voltage application, notebook computer
power management and other battery powered circuits
where high-side switching.
SOP-8L
Pin configuration (Top view)
Features
z Super high density cell design for extremely low
RDS(ON)
z Exceptional on-resistance and maximum DC
current capability
z SOP-8L package design
Applications
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
WPM3002
YYWW
WPM3002
YY
WW
= Device Code
= Year
= Week
Marking
Order information
Device
Package
Shipping
WPMD3002-8/TR SOP-8L 2500/Reel&Tape
Will Semiconductor Ltd.
1 Dec,2011 - Rev.1.2
1 page  
WPMD3002
1000
V =0V f=1MHZ
GS
800
600
400
Crss
Cout
200 Cin
0
0 4 8 12 16 20
-V - Drain to Source Voltage (V)
DS
Capacitance
50
40
30
20
10
0
10-3
10-2
10-1
1
Time (s)
10
Single pulse power
100 600
1000
800
T=1500C
600
400
T=250C
200
0.3 0.4 0.5 0.6 0.7 0.8 0.9
-V - Source to Drain Voltage(V)
SD
Body diode forward voltage
100.0 TJ(Max)=150°C
TA=25°C
10.0
RDS(ON)
limited
1.0
0.1
0.1
1s
10s
DC
1 10
-VDS (Volts)
10Ps
100Ps
1ms
10ms
0.1s
100
Safe operating power
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 87 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-3
10-2
10-1
1
10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Will Semiconductor Ltd.
4 Dec,2011 - Rev.1.2
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet WPMD3002.PDF ] | |
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