DataSheet26.com

WSB20L100T PDF даташит

Спецификация WSB20L100T изготовлена ​​​​«WillSEMI» и имеет функцию, называемую «Schottky Barrier Diode».

Детали детали

Номер произв WSB20L100T
Описание Schottky Barrier Diode
Производители WillSEMI
логотип WillSEMI логотип 

3 Pages
scroll

No Preview Available !

WSB20L100T Даташит, Описание, Даташиты
WSB20L100T
Power Schottky Barrier Rectifier
WSB20L100T
www.sh-willsemi.com
Features
2x10A average rectified forward current
Low forward voltage and Low leakage current
High Junction temperature
High forward and reverse Surge capability
Circuit
Applications
High frequency switch model power supplies
DC-DC Convertors, Power adapters
Absolute maximum ratings
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Per diode
Per device
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Junction temperature
Operating temperature
Storage temperature
Thermal Resistance Ratings
Maximum Thermal Resistance
Junction To case (Per leg)
TO-220
WSB20L100 = Device code
TO = Special code
Y =Year
W =WeekA~z
Marking
Symbol
VRM
VR
IF
IF
IFSM
TJ
Topr
Tstg
Value
100
100
10
20
200
150
-55 ~ 150
-55 ~ 150
Unit
V
V
A
A
A
0C
0C
0C
RθJC
2.0
°C/W
Order information
Device
WSB20L100T-3/T
Package
TO-220
Marking
WSB20L100TOYW
Units/Tube
50
Will Semiconductor Ltd.
1 Jun, 2014 - Rev. 1.1









No Preview Available !

WSB20L100T Даташит, Описание, Даташиты
Electronics characteristics (Per diode, TA =25oC)
Parameter
Reverse Breakdown Voltage
Forward voltage
Reverse current
Junction capacitance
Symbol
VR
VF
IR
CJ
Condition
IR=0.5mA
IF=10A
VR=100V
VR=25V, F=1MHz
Min.
100
-
-
Typical characteristics (Ta=25oC, unless otherwise noted)
WSB20L100T
Typ. Max.
0.6 0.7
11 100
180
Unit
V
V
uA
pF
10 0.01
1
0.1
0.01
-40oC
-25oC
25oC
85oC
125oC
150oC
1E-4
1E-6
-40OC
-25OC
25OC
85OC
125OC
150OC
1E-8
1E-3
0.0
0.2 0.4 0.6 0.8
Forward Voltage (V)
Forward voltage vs. Forward current
1.0
12
10
20 40 60 80
Reverse Voltage (V)
Reverse current vs. Reverse voltage
100
10000
f = 1MHz
8
6 1000
4
2
0
0 25 50 75 100 125
Case Temperature (0C)
Forward Current Derating Curve
150
100
0
5 10 15 20 25
Reverse Voltage (V)
Junction capacitance vs. Reverse voltage
Will Semiconductor Ltd.
2 Jun, 2014 - Rev. 1.1









No Preview Available !

WSB20L100T Даташит, Описание, Даташиты
Package outline dimensions
TO-220
WSB20L100T
Will Semiconductor Ltd.
3 Jun, 2014 - Rev. 1.1










Скачать PDF:

[ WSB20L100T.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
WSB20L100TSchottky Barrier DiodeWillSEMI
WillSEMI
WSB20L100TFSchottky Barrier DiodeWillSEMI
WillSEMI

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск