WSB5508L PDF даташит
Спецификация WSB5508L изготовлена «WillSEMI» и имеет функцию, называемую «Schottky Barrier Diode». |
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Детали детали
Номер произв | WSB5508L |
Описание | Schottky Barrier Diode |
Производители | WillSEMI |
логотип |
3 Pages
No Preview Available ! |
WSB5508L
Middle Power Schottky Barrier Diode
Features
1A Average rectified forward current
Low forward voltage
Low leakage current
SOD-123 package
Applications
Switching circuit
Middle current rectification
Absolute maximum ratings
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Peak forward current (1)
Operating Junction Temperature
Storage temperature
WSB5508L
Http//:www.willsemi.com
SOD-123
Circuit
*L
Marking
Symbol
VRM
VR
IO
IPK
Topr
Tstg
Value
40
40
1
25
-55 ~ 150
-55 ~ 150
Unit
V
V
A
A
OC
OC
Electronics characteristics (TA=25oC)
Parameter
Symbol
Condition
Forward voltage
Reverse current
Junction capacitance
Thermal resistance
VF IF=1A
IR VR=40V
CJ VR=4V, F=1MHz
RθJL Junction to lead
Min.
Typ.
105
Max.
0.57
100
120
Unit
V
uA
pF
K/W
Order Informations
Device
WSB5508L-2/TR
Package
SOD-123
Note 1: Pulse Width=1us, Single Pulse
Note 2: * = Month code (A~Z); L = Device code
Marking
*L (2)
Shipping
3000/Reel&Tape
Will Semiconductor Ltd.
1 Jan, 2016-Rev. 1.2
No Preview Available ! |
Typical characteristics (Ta=25oC, unless otherwise noted)
-40oC
-25oC
1 +25oC
+65oC
+85oC
0.1
1000
100
10
1
0.01
0.1
0.01
WSB5508L
+65℃
+25℃
-40℃
+85℃
-25℃
1E-3
0.0
0.2 0.4
Forward Voltage(V)
0.6
1E-3
5
10 15 20 25 30 35 40
Reverse Voltage (V)
Forward voltage vs. Forward current
Reverse current vs. Reverse voltage
30
25
20
15
10
5
0
1 10 100
Time: t (uS)
Peak pulse forward current characteristics
Junction capacitance vs. Reverse voltage
1.5
1.0
0.5
0.0
0
50 100 150
T (oC)-Lead temperature
L
Current Derating
Will Semiconductor Ltd.
200
2
Jan, 2016-Rev. 1.2
No Preview Available ! |
Package outline dimensions
SOD-123
WSB5508L
Symbol
A
A1
A2
b
c
D
E
E1
L
L1
θ
Dimensions in millimeters
Min.
Max.
1.050
1.250
0.000
0.100
1.050
1.150
0.450
0.650
0.080
0.150
1.500
1.700
2.600
2.800
3.550
3.850
0.500 (REF)
0.250
0.450
0° 8°
Dimensions in inches
Min.
Max.
0.041
0.049
0.000
0.004
0.041
0.045
0.018
0.026
0.003
0.006
0.059
0.067
0.102
0.110
0.140
0.152
0.020 (REF)
0.010
0.018
0° 8°
Will Semiconductor Ltd.
Land Pattern Recommendation
3 Jan, 2016-Rev. 1.2
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WSB5508L | Schottky Barrier Diode | WillSEMI |
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